COMSET SEMICONDUCTORS
1/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDY26, 183T2
180
BDY27, 184T2
200
V
CEO
Collector-Emitter Voltage
BDY28, 185T2
250
V
BDY26, 183T2
300
BDY27, 184T2
400
V
CBO
Collector-Base Voltage
BDY28, 185T2
500
V
V
EBO
Emitter-Base Voltage
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
10
V
I
C
Collector Current
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
6
A
I
B
Base Current
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
3
A
P
TOT
Power Dissipation
@ T
C
= 25
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
87.5
Watts
T
J
Junction Temperature
T
Stg
Storage Temperature
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
200
-65 to +200
C
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA
COMSET SEMICONDUCTORS
2/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R
thJ-C
Thermal Resistance, Junction to Case
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
2
C/W
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
BDY26, 183T2
180
-
-
BDY27, 184T2
200
-
-
BDY28A, 185T2A
250
-
-
BDY28B, 185T2B
250
-
-
V
CEO(BR)
Collector-Emitter
Breakdown Voltage (*)
I
C
=50 mA, I
B
=0
BDY28C, 185T2C
220
-
-
V
BDY26, 183T2
300
-
-
BDY27, 184T2
400
-
-
V
(BR)CBO
Collector-Base Breakdown
Voltage (*)
I
C
=3 mA
BDY28, 185T2
500
-
-
V
V
CE
=180 V
BDY26
-
-
V
CE
=200 V
BDY27
-
-
I
CEO
Collector-Emitter Cutoff
Current
V
CE
=250 V
BDY28
-
-
1.0
mA
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
-
-
1.0
mA
V
CE
=250 V
V
BE
=0 V
BDY26, 183T2
-
-
V
CE
=300 V
V
BE
=0 V
BDY27, 184T2
-
-
I
CES
Collector-Emitter Cutoff
Current
V
CE
=400 V
V
BE
=0 V
BDY28, 185T2
-
-
1.0
mA
COMSET SEMICONDUCTORS
3/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
BDY26, 183T2
-
-
BDY27, 184T2
-
-
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
BDY28, 185T2
-
-
0.6
V
BDY26, 183T2
-
-
BDY27, 184T2
-
-
V
BE(SAT)
Base-Emitter Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
BDY28, 185T2
-
-
1.2
V
A
-
55
-
B
-
65
-
V
CE
=4 V, I
C
=1 A
C
-
90
-
A
15
20
45
B
30
45
90
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=2 A
C
75
82
100
-
f
T
Transition Frequency
V
CE
=15 V, I
C
=0.5 A,
f=10 MHz
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
10
-
-
MHz
t
d
+ t
r
Turn-on time
I
C
=5 A,
I
B
=1 A
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
-
0.3
0.5
s
t
s
+ t
f
Turn-off time
I
C
=5 A,
I
B1
=1 A,
I
B2
=-0.5 A
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
-
1.5
2.0
s
(*) Pulse Width
300
s, Duty Cycle
2.0%
COMSET SEMICONDUCTORS
4/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,45
1
B
38,8
1,52
C
30,09
1,18
D
17,11
0,67
E
9,78
0,39
G
11,09
0,45
H
8,33
0,34
L
1,62
0,06
M
19,43
0,79
N
1
0,04
P
4,08
0,16
Pin 1 :
Base
Pin 2 :
Collector
Case :
Emitter
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