e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
G
ps
10
11
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.2 A Total, f = 1.99 GHz)
P-1dB
120
--
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 120 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
h
D
--
40
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 1.2 A Total, f = 1.99 GHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
PTF 10120
120 Watts, 1.82.0 GHz
GOLDMOS
TM
Field Effect Transistor
Package 20250
0
30
60
90
120
150
0
3
6
9
12
15
18
Input Power (Watts)
0
20
40
60
80
100
V
DD
= 28 V
I
DQ
= 1.2 A Total
f = 1990 MHz
Typical Output Power vs. Input Power
Output Power
Efficiency
Output Power (Watts
)
Efficiency (%
)
Description
The PTF 10120 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
10120
A-1234569849
PTF 10120
2
e
Electrical Characteristics
(100% Tested--characteristics, conditions and limits shown per side)
Characteristic
(per side)
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 100 mA
V
(BR)DSS
65
--
--
Volts
Zero Gate Voltage Drain Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
5.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 150 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 2 A
g
fs
--
4.0
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
(1)
V
DSS
65
Vdc
Gate-Source Voltage
(1)
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at
P
D
440
Watts
Above 25C derate by
2.51
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
0.39
C/W
(1)
per side
Typical Performance
7
8
9
10
11
12
1750
1850
1950
2050
Frequency (MHz)
G
a
in (dB)
20
40
60
80
100
120
140
160
Output Power & Efficienc
y
V
DD
= 28 V
I
DQ
= 1.2 A Total
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
8
9
10
11
12
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
G
a
in (dB)
0
15
30
45
60
Gain (dB)
Return Loss (dB)
Efficiency (%)
@P-1dB
Efficienc
y
Re
turn Los
s
0
- 5
-10
-15
-20
V
DD
= 28 V
I
DQ
= 1.2 A Total
P
OUT
= 120 W
PTF 10120
3
e
Power Gain vs. Output Power
7
8
9
10
11
12
13
1
10
100
1000
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 28 V
f = 1990 MHz
I
DQ
= 1200 mA
I
DQ
= 600 mA
I
DQ
= 300 mA
-65
-55
-45
-35
-25
-15
0
20
40
60
80
100
120
140
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V
I
DQ
= 1.2 A Total
f
1
= 1959 MHz
f
2
= 1960 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
IM3
IM7
IM5
Impedance Data
(V
DD
= 28 V, P
OUT
= 120 W,
I
DQ
= 1.2 A Total)
Output Power vs. Supply Voltage
80
100
120
140
160
180
22
24
26
28
30
32
34
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 1.2 A Total
f = 1990 MHz
0
40
80
120
160
200
240
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
5
10
15
20
25
30
Crs
s
C
gs
C
ds
C
rss
V
GS
=0 V
f = 1 MHz
Capacitance vs. Supply Voltage
(per side)
*
* This part is internally matched. Measurements of the finished
product will not yield these results.
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
1.75
7.6
-10.5
4.6
-3.6
1.80
8.8
-13.0
4.2
-3.2
1.85
9.8
-14.1
4.0
-2.8
1.90
11.0
-15.2
3.7
-2.8
1.95
12.0
-17.0
3.6
-3.2
2.00
13.4
-17.5
3.4
-3.8
2.05
14.6
-18.0
3.2
-4.4
Z Source
Z Load
G
D
G
S
D
Z
0
= 50
W
PTF 10120
4
e
Test Circuit
Test Circuit Block Diagram for f = 2.0 GHz
Q1
PTF 10120
LDMOS RF Transistor
l
1,
l
2
Microstrip 50
W
l
3,
l
4
.048
l
@ 2.0 GHz
Microstrip 31.7
W
l
5,
l
6
.18
l
@ 2.0 GHz
Microstrip 70
W
l
7,
l
8
.097
l
@ 2.0 GHz
Microstrip 9.35
W
l
9,
l
10
.129
l
@ 2 GHz
Microstrip 7.6
W
l
11,
l
12
.031
l
@ 2 GHz
Microstrip 8.8
W
l
13,
l
14
.25
l
@ 2 GHz
Microstrip 65
W
C1, C2, C3, C4, C5,
C6, C11, C12
10 pF Chip Cap
ATC 100 B
C7, C8, C15, C16
0.1
m
F Chip Cap
K1206
C9, C10, C13, C14
10
m
F SMT Tantalum Cap
C17
0.7 pF Chip Cap
ATC 100 B
L1, L2
2.7 nh
SMT Coil
L3, L4
4 mm
SMT Ferrite Bead
R1, R2, R3, R4
220
W
Chip Resistor K1206
R5, R6
2K
SMT Potentiometer
R7, R8
10
W
Chip Resistor K1206
R9, R10
1
W
Chip Resistor K1206
T1, T2
50
W
Coaxial Balun
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
PTF 10120
5
e
Parts Layout (not to scale)
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1998 Ericsson Inc.
EUS/KR 1301-PTF 10120 Uen Rev. A 01-06-99
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com\rfpower
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