e
1
PTF 10052
35 Watts, 1.0 GHz
GOLDMOS
TM
Field Effect Transistor
10007
A-1234569725
0
10
20
30
40
50
0
1
2
3
Input Power (Watts)
Ou
tp
u
t
Po
we
r
0
20
40
60
80
100
Efficiency
V
DD
= 28 V
I
DQ
= 300 m A
f = 960 MHz
Typical Output Pow er & Efficiency
vs. Input Pow er
Output Pow er (W)
Ef ficiency (%)
Package
20222
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and
13.5 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Available in Package 20222 as PTF 10007
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
G
ps
12.0
13.5
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 300 mA, f = 960 MHz)
P-1dB
35
--
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
h
50
55
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz--
Y
--
--
10:1
--
all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
Package
20235
10052
B-1234569916
2
PTF 10052
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 5 mA
V
(BR)DSS
65
70
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.8
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
120
Watts
Above 25C derate by
0.7
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
1.4
C/W
Typical Performance
0
5
10
15
20
25
30
400
500
600
700
800
900
1000
Frequency (MHz)
Gai
n
20
30
40
50
60
70
Out
put
P
ower & E
f
f
i
ci
enc
y
V
DD
= 28 V
I
DQ
= 300 mA
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Efficiency (%)
Output Pow er (W)
Gain (dB)
Broadband Test Fixture Performance
4
8
12
16
20
925
930
935
940
945
950
955
960
Frequency (MHz)
G
a
in (dB
)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 300 mA
P
OUT
= 35 W
Gain
Return Loss (dB)
Efficiency (%)
Effi
ci
en
c
y
R
e
tur
n
Los
s
- 5
-15
-25
-35
3
PTF 10052
e
Typical Performance
Power Gain vs. Output Power
11
12
13
14
15
16
17
0.1
1.0
10.0
100.0
Output Power (Watts)
P
ower Gai
n
(
d
B)
V
DD
= 28 V
f = 960 MHz
I
DQ
= 150 mA
I
DQ
= 300 mA
I
DQ
= 75 mA
Intermodulation Distortion vs. Output Power
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
Output Power (Watts-PEP)
I
M
D (dBc
)
3rd
7th
5th
V
DD
= 28 V
I
DQ
= 300 m A
f
1
= 960.000 MHz
f
2
= 960.100 MHz
Output Power vs. Supply Voltage
30
35
40
45
22
24
26
28
30
32
34
Supply Voltage (Volts)
Out
put
P
ower (
W
at
t
s
)
I
DQ
= 300 mA
P
OUT
= 5 W
f = 960 MHz
Capacitance vs. Supply Voltage
0
20
40
60
80
100
120
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF
)
0
5
10
15
20
25
30
35
40
Crss (pF)
C
gs
C
ds
C
rss
V
GS
=0 V
f = 1 MHz
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V)
0.3
0.87
1.44
2.01
2.58
3.15
Voltage normalized to 1.0 V
Series show current (A)
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