e
1
PTF 10048
30 Watts, 2.12.2 GHz, W-CDMA
GOLDMOS
Field Effect Transistor
10048
A-1234569940
Package 20237
0
10
20
30
40
0
1
2
3
4
Input Power (Watts)
O
u
tp
u
t
P
o
w
e
r
(Wa
tts
)
5
15
25
35
45
Ef
f
i
ci
ency (
%
)
X
V
DD
= 28 V
I
DQ
= 425 mA
f = 2170 MHz
Typical Output Power & Efficiency vs. Input Power
Efficiency
Output Pow er
Description
The PTF 10048 is an internally matched 30watt GOLDMOS FET
intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at
40% efficiency with 10.5 dB typical gain. Nitride surface passivation
and full gold metallization ensure excellent device lifetime and
reliability.
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 30 Watts Min
- Gain = 10.5 dB Typ at 30 Watts
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 10 W, I
DQ
= 425 mA, f = 2.11 & 2.17 GHz)
G
ps
10
11
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 425 mA, f = 2.17 GHz)
P-1dB
30
36
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 425 mA, f = 2.17 GHz)
h
30
40
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 425 mA, f = 2.17 GHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
PTF 10048
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 50 mA
V
(BR)DSS
65
65
--
Volts
Zero Gate Voltage Drain Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 6 A
g
fs
--
1.8
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
120
Watts
Above 25C derate by
0.66
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
1.5
C/W
Typical Performance
8
9
10
11
12
2000
2050
2100
2150
2200
2250
2300
Frequency (MHz)
Gai
n
25
30
35
40
45
50
Output Power & Effi
ci
ency
V
DD
= 28 V
I
DQ
= 425 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Pow er (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
2
4
6
8
10
12
14
2100
2125
2150
2175
2200
Frequency (MHz)
G
a
in
(d
B
)
5
15
25
35
45
V
DD
= 28 V
I
DQ
= 425 mA
P
OUT
= 10 W
Gain (dB)
Return Loss
Efficiency (%)
Effi
ci
ency
Ret
u
rn Loss
0
- 5
-10
-15
-20
-25
-30
PTF 10048
3
e
Typical Performance
Output Power vs. Supply Voltage
25
30
35
40
45
22
24
26
28
30
32
34
Supply Voltage (Volts)
O
u
tp
u
t
Po
w
e
r (W
atts)
I
DQ
= 425 mA
f = 2170 MHz
-70
-60
-50
-40
-30
-20
0
5
10
15
20
25
30
Output Power (Watts-PEP)
I
M
D (dBc)
V
DD
= 28 V, I
DQ
= 425 mA
f
1
= 2169 MHz, f
2
= 2170 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
Power Gain vs. Output Power
6
7
8
9
10
11
12
0
1
100
Output Power (Watts)
P
o
wer Gai
n
(
d
B)
V
DD
= 28 V
f = 2170 MHz
I
CQ
= 425 mA
I
CQ
= 213 mA
I
CQ
= 106 mA
Capacitance vs. Supply Voltage *
0
20
40
60
80
100
120
140
160
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (
pF)
0
1
2
3
4
5
6
7
8
9
Crss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
*This part is internally matched. Measurements of the
finished product will not yield these figures.
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V)
0.200
0.692
1.183
1.675
2.167
2.658
Voltage normalized to 1.0 V
Series show current (A)
PTF 10048
4
e
Z
0
= 50
W
Impedance Data
(V
DD
= 28 V, P
out
= 30 W, I
DQ
= 425 mA)
Z Source
Z Load
G
S
D
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
2.00
6.0
-16.7
3.6
-4.7
2.10
10.3
-19.0
3.4
-4.4
2.12
13.2
-19.3
3.4
-4.1
2.15
17.9
-17.3
3.0
-3.8
2.17
18.5
-17.2
2.8
-3.8
2.20
19.6
-12.3
2.9
-3.5
2.30
20.5
-4.6
3.0
-3.3
PTF 10048
5
e
Test Circuit Schematic for f = 2.15 GHz
DUT
PTF 10048
LDMOS Power Transistor
l
1
0.052
l
2.15 GHz Microstrip 11.14
W
l
2, l5
0.255
l
2.15 GHz Microstrip 50 W
l
3
0.075
l
2.15 GHz Microstrip 50 W
l
4
0.143
l
2.15 GHz Microstrip 10.2
W
l
6
0.250
l
2.15 GHz Microstrip 75
W
l
7
0.125
l
2.15 GHz Microstrip 80
W
C1, C10
10 F
Tantulum Capacitor
C2, C5, C6, C9
10 pF
Chip Capacitor, ATC 100 B
C3, C8
0.1 F, 50 V
Digi-Key P4525-ND
C4
0.2 pF, 50 V
Chip Capacitor, ATC 100 A
C7
0.9 pF
Chip Capacitor, ATC 100 A
Test Circuit
J1, J2
SMA Female Connectors, Panel Mount
L1
4.7 nH
L2
6 mm SMT Ferrite Bead
R1, R2
220
W
Chip Resistor, P220ECI
R3
1.0
W
Chip Resistor, P1.0ECT
Circuit Board 0.031" thick,
e
r
= 4.0, G200, AlliedSignal,
2 oz. copper
Parts Layout (not to scale)
PTF 10048
6
e
PTF 10048
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com\rfpower
Specifications subject to change without notice.
L3
1998, 1999, 2001 Ericsson Inc.
EUS/KR 1522-PTF 10048 Uen Rev. A 02-13-01
Case Outline Specifications
Package 20237
PDF 
ZIP