e
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RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz)
G
pe
13.0
14.5
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 600 mA, f = 960 MHz)
P-1dB
70
75
--
Watts
Drain Efficiency
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz)
h
45
50
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz
Y
--
--
10:1
--
--all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
Description
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended
for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz
range. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
PTF 10019
70 Watts, 860960 MHz
GOLDMOS
TM
Field Effect Transistor
10019
A-1234568955
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
Input Power (Watts)
10
18
26
34
42
50
58
66
74
Typical Output Power vs. Input Power
V
DD
= 28 V
I
DQ
= 600 mA
f = 960 MHz
Output Power
Efficiency
Ou
tp
u
t
Po
we
r (Wa
tts
)
E
f
f
i
ci
en
cy (
%
)
Package 20237
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 70 Watts
- Power Gain = 14.5 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
2
PTF 10019
e
12
13
14
15
16
800
850
900
950
1000
Frequency (MHz)
Power Gain @ P-1dB
50
60
70
80
90
Typical P
OUT
, Gain, and Efficiency
(at P-1 dB)
vs. Frequency
Output Power and Efficienc
y
Output Power (W)
Power Gain (dB)
Efficiency (%)
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 26 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
3.0
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
215
Watts
Above 25C derate by
1.25
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
0.8
C/W
Typical Performance
Broadband Test Fixture Performance
4
6
8
10
12
14
16
900
915
930
945
960
Frequency (MHz)
Ga
i
n
10
20
30
40
50
60
70
Return Loss (dB)
Gain (dB)
Efficiency (%)
Efficienc
y
Re
turn Los
s
- 5
-15
-25
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 70 W
3
PTF 10019
e
Power Gain vs. Output Power
10
11
12
13
14
15
16
17
18
0.1
1.0
10.0
100.0
Output Power (Watts)
G
a
in (dB)
I
DQ
= 600 mA
I
DQ
= 300 mA
I
DQ
= 150 mA
55
60
65
70
75
80
85
90
23
25
27
29
31
33
Drain-Source Voltage (Volts)
Output Power (Watts)
f = 960 MHz
I
DQ
= 600 mA
Output Power
(at P-1dB)
vs. Supply Voltage
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Output Power (Watts-PEP)
IM
D (dBc
)
3rd Order
7th
5th
V
DD
= 28 V
I
DQ
= 600 mA
f
1
= 959.900 MHz
f
2
= 960.000 MHz
Intermodulation Distortion vs. Output Power
Capacitance vs. Voltage *
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
Supply Voltage (Volts)
C
d
s and C
g
s (pF
)
0
2
4
6
8
10
12
14
16
18
20
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
* This part is internally matched. Measurements of the
finished product will not yield these figures.
Bias Voltage vs. Temperature
0.94
0.96
0.98
1.00
1.02
1.04
-20
30
80
130
Temp. (C)
Bias Voltage (V)
0.40
1.32
2.25
3.17
4.09
5.02
Voltage normalized to 1.0 V
Series show current (A)
4
PTF 10019
e
Test Circuit
Test Circuit Schematic for f = 960 MHz
DUT
PTF 10019
LDMOS Field Effect Transistor
l
1,
l
6
Microstrip 50
W
l
2
0.125
l
960 GHz
Microstrip 50
W
l
3
0.186
l
960 GHz
Microstrip 10
W
l
4
0.200
l
960 GHz
Microstrip 7.5
W
l
5
0.060
l
960 GHz
Microstrip 50
W
C1, C2, C4, C6 36 pF
Chip Cap ATC 100 B
C3
3.6 pF
Chip Cap ATC 100 A
C5
0.01
m
F
Capacitor Digi-Key P4917-ND
C7
50
m
F, 35 V
Electrolytic Capacitor,
Digi-Key P5276
C8
1.7 pF
Chip Cap ATC 100 B
L1
4 Turn, #20 AWG, .120"I.D.
R1, R2, R3
220
W
, 1/4 W Resistor
R4
10K
W
, 1/4 W Resistor
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
840
0.9
0
2.3
1.7
860
1.0
-0.2
2.0
1.6
900
1.2
-0.4
1.8
1.6
920
1.2
-0.4
1.7
1.6
960
1.8
-0.7
1.6
1.7
980
2.2
-0.6
1.6
1.8
Z Source
Z Load
G
S
D
Impedance Data
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA)
Z
0
= 10
W
5
PTF 10019
e
Components Layout (not to scale)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1997 Ericsson Inc.
EUS/KR 1301-PTF 10019 Uen Rev. A 10-22-99
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
10019
Artwork (1 inch
)
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Notes:
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