e
1
0
25
50
75
100
125
150
175
200
0
4
8
12
16
20
24
Input Power (Watts)
Output Power (Watts)
V
CC
= 28 V
I
CQ
= 0.800 A Total
f = 860 MHz
Typical Output Power vs. Input Power
PTB 20237
150 Watts, 470860 MHz
UHF TV Power Transistor
Package 20236
20237
LOT CODE
Description
The 20237 is a class AB, NPN, common emitter UHF TV power
transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated
at 150 watts minimum output power, it may be used for both CW and
PEP applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
470860 MHz, 28 Volts
Class AB Characteristics
50% Collector Efficiency at 150 Watts
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4
Vdc
Collector Current (continuous)
I
C
25
Adc
Total Device Dissipation at Tflange = 25C
P
D
330
Watts
Above 25C derate by
1.89
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
0.53
C/W
9/28/98
PTB 20237
2
e
Gain vs. Frequency
(as measured in a broadband circuit)
7
8
9
10
11
470
520
570
620
670
720
770
820
870
Frequency (MHz)
G
a
in (dB)
V
CC
= 28 V
I
CQ
= 0.800 A Total
Pout = 150 W
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
C
= 0 A, I
B
= 100 A
V
(BR)CEO
28
30
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 mA
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 28 Vdc, P
OUT
= 150 W, I
CQ
= 800 mA Total,
G
pe
8
9
--
dB
f = 470, 860 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, P
OUT
= 150 W, I
CQ
= 800 mA Total,
C
50
--
--
%
f = 470, 860 MHz)
Intermodulation Distortion
(V
CC
= 28 Vdc, I
CQ
= 800 mA Total, P
OUT
= 100 W(PEP),
IMD
--
44
--
dBc
f
1
= 855.25 MHz, Vision = -8 dB, f
2
= 859.75 MHz,
Subcarrier = -16 dB, f
3
= 860.75 MHz, Sound = -10 dB)
Load Mismatch Tolerance
(V
CC
= 28 Vdc, P
OUT
= 150 W(PEP), I
CQ
= 800 mA Total,
--
--
3:1
--
f
1
= 860.0 MHz, f
2
= 860.1--all phase angles at frequency of test)
Typical Performance
5/6/98
PTB 20237
4
e
Components Layout (not to scale)
Artwork (1 inch
)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1997 Ericsson Inc.
EUS/KR 1301-PTB 20237 Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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