e
1
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
Input Power (Watts)
Output Power (Watts)
0
15
30
45
60
Efficiency (%)
V
CC
= 25 V
I
CQ
= 24 mA
f = 960 MHz
Typical Power Out and Efficiency vs. Power In
Efficiency
Output Power
PTB 20220
15 Watts, 915960 MHz
Cellular Radio RF Power Transistor
20220
LOT CODE
Description
The 20220 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 15 watts minimum output power for PEP applications,
it may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization ensure excellent
device reliability. 100% lot traceability is standard.
Package 20232
15 Watts, 915960 MHz
Class AB Characteristics
50% Collector Efficiency at 15 Watts
Surface Mountable
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
65
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
4.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
37
Watts
Above 25C derate by
0.21
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance
(Tflange = 70C)
R
JC
4.7
C/W
9/28/98
PTB 20220
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA
V
(BR)CEO
25
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
65
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
35
--
--
--
Output Capacitance
V
CC
= 25 V, I
E
= 0 A, f = 1 MHz
Cob
--
14.1
--
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 5 W, I
CQ
= 24 mA, f = 960 MHz)
G
pe
8.75
--
--
dB
Gain Compression
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 24 mA, f = 960 MHz)
P-1dB
15
--
--
Watts
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 24 mA, f = 960 MHz)
C
50
--
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 24 mA, f = 960 MHz
--
--
30:1
--
--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 24 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
915
2.26
-3.40
6.12
5.42
935
1.99
-2.84
6.30
5.51
960
1.75
-2.41
6.50
5.52
Z
0
= 50
5/14/98
PTB 20220
3
e
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
910
920
930
940
950
960
970
Frequency (MHz)
Ga
in (dB)
V
CC
= 25 V
I
CQ
= 24 mA
Pin = 0.75 W
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20220 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/14/98
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