e
1
Description
The 20193 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 1.81.9 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
PTB 20193
60 Watts, 1.81.9 GHz
Cellular Radio RF Power Transistor
20193
LOT CODE
Package 20223
Typical Output Power vs. Input Power
10
20
30
40
50
60
70
1
3
5
7
9
11
13
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 150 mA
f = 1.9 GHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Emitter Voltage
V
CES
55
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
8
Adc
Total Device Dissipation at Tflange = 25 C
P
D
233
W
Above 25C derate by
1.33
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70 C)
R
JC
0.75
C/W
9/28/98
PTB 20193
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Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.80
4.0
-1.6
2.7
0.65
1.90
3.6
-.08
2.6
1.90
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristics
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 60 mA, R
BE
= 27
V
(BR)CER
55
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 60 mA
V
(BR)CES
55
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 V, I
E
= 25 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 300 mA
H
fe
20
50
120
--
RF Specifications
(100% Tested)
Characteristics
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 15 W, I
CQ
= 150 mA, f = 1.9 GHz)
G
pe
8.0
8.5
--
dB
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 150 mA, f = 1.9 GHz)
P-1dB
60
--
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 60 W, I
CQ
= 150 mA, f = 1.9 GHz)
C
43
--
--
%
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 30 W, I
CQ
= 150 mA,
--
--
5:1
--
f = 1.9 GHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 60 W, I
CQ
= 150 mA)
Z
0
= 50
5/19/98
PTB 20193
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Intermodulation Distortion vs. Power Output
-40
-38
-36
-34
-32
-30
-28
-26
0
10
20
30
40
50
60
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 26 V
I
CQ
= 150 mA
f
1
= 1.899 GHz
f
2
= 1.900 GHz
Efficiency vs. Output Power
0
10
20
30
40
50
60
20
25
30
35
40
45
50
55
60
65
Output Power (Watts)
Efficiency (%)
V
CC
= 26 V
I
CQ
= 150 mA
f = 1.9 GHz
Gain vs. Frequency
(as measured in a broadband circuit)
7.0
7.5
8.0
8.5
9.0
1800
1820
1840
1860
1880
1900
Frequency (MHz)
G
a
in (dB)
V
CC
= 26 V
I
CQ
= 150 mA
Pout =15 W
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20193 Uen Rev. A 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/19/98
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