e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
2.0
Adc
Total Device Dissipation at Tflange = 25C
P
D
52
Watts
Above 25C derate by
0.29
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
3.4
C/W
Typical Gain & Return Loss vs. Frequency
(as measured in a broadband circuit)
0
2
4
6
8
10
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Frequency (GHz)
G
a
in (dB)
-15
-12
-9
-6
-3
0
Re
turn Los
s
(dB)
V
CC
= 22 V
Pin = 2.0 W
Return Loss (dB)
Gain (dB)
PTB 20156
8 Watts, 13501850 MHz
Microwave Power Transistor
20156
LOT CODE
Description
The 20156 is an NPN, common base RF power transistor intended
for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Specified 22 Volts
Class C Characteristics
Output Power: 8 Watts
Gain: 6.0 dB Min. at 8 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20209
9/28/98
PTB 20156
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V(
BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V(
BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
--
--
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 22 Vdc, Pout = 8 W, f = 1850 MHz)
G
pe
6.0
--
--
dB
Collector Efficiency
(V
CC
= 22 Vdc, Pout = 8 W, f = 1850 MHz)
C
40
50
--
%
Load Mismatch Tolerance
(V
CC
= 22 Vdc, Pout = 8 W, f = 1850 MHz
--
--
5:1
--
--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 22 Vdc, Pout = 20 W)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
1350
13.8
-14.0
4.2
0.0
1500
11.2
-12.8
5.6
0.5
1700
10.7
-8.4
6.0
-1.5
1850
20.0
-9.3
4.2
-2.1
PTB 20156
3
e
Gain & Efficiency vs. Power Out
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
Output Power (Watts)
G
a
in (dB)
0
10
20
30
40
50
60
Efficiency (%)
V
CC
= 28 V
f = 1.85 GHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20156 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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