e
1
0
10
20
30
40
50
60
0
2
4
6
8
10
Input Power (Watts)
Output Power (Watts)
V
CC
= 25 V
I
CQ
= 200 mA
f = 960 MHz
Typical Output Power vs. Input Power
PTB 20097
40 Watts, 915960 MHz
Cellular Radio RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
10
Adc
Total Device Dissipation at Tflange = 25C
P
D
175
Watts
Above 25C derate by
1.0
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
1.0
C/W
20097
LOT CODE
Description
The 20097 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 40 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
40 Watts, 915960 MHz
Class AB Characteristics
50% Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20200
9/28/98
PTB 20097
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 960 MHz)
G
pe
8.5
9.5
--
dB
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 960 MHz)
C
50
--
--
%
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 40 W, I
CQ
= 200 mA, f = 960 MHz
--
--
10:1
--
--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 40 W, I
CQ
= 200 mA)
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
915
5.2
-2.8
4.9
-4.3
935
5.1
-2.6
4.7
-3.7
960
4.7
-2.1
4.6
-2.9
5/19/98
PTB 20097
3
e
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
6
7
8
9
10
11
12
900
915
930
945
960
975
Frequency (MHz)
G
a
in (dB)
20
30
40
50
60
70
80
Efficiency (%)
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 40 W
Gain (dB)
Efficiency (%)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20097 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5/19/98
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