e
1
PTB 20082
15 Watts, 1.82.0 GHz
Cellular Radio RF Power Transistor
0
4
8
12
16
20
0
1
2
3
4
Input Power (Watts)
Output Power (Watts)
V
CC
= 26 V
I
CQ
= 70 mA
f = 2.0 GHz
Typical Output Power vs. Input Power
Package 20209
20082
LOT CODE
Description
The 20082 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
excellent device reliability. 100% lot traceability is standard.
10 Watts Linear Power
Output Power at 1 dB Compressed = 15 W
Class AB Characteristics
30% Collector Efficiency at 7.5 Watts
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.4
Adc
Total Device Dissipation at Tflange = 25C
P
D
52
Watts
Above 25C derate by
0.29
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70C)
R
JC
3.4
C/W
9/28/98
PTB 20082
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
V
(BR)CER
50
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
--
--
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, P
OUT
= 7.5 W, I
CQ
= 70 mA, f = 2.0 GHz)
G
pe
8
9
--
dB
Output Power at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 70 mA, f = 2.0 GHz)
P-1dB
15
--
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, P
OUT
= 7.5 W, I
CQ
= 70 mA, f = 2.0 GHz)
C
30
--
--
%
Load Mismatch Tolerance
(V
CC
= 26 Vdc, P
OUT
= 7.5 W, I
CQ
= 70 mA,
--
--
5:1
--
f = 2.0 GHz--all phase angles at frequency of test)
Typical Performance
5
6
7
8
9
10
1750
1800
1850
1900
1950
2000
2050
Frequency (MHz)
Ga
i
n
10
20
30
40
50
60
Output Power & Efficiency
V
CC
= 26 V
I
CQ
= 70 mA
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
4
8
12
16
20
1900
1925
1950
1975
2000
Frequency (MHz)
Ga
i
n
0
10
20
30
40
50
60
V
CC
= 26 V
I
CQ
= 70 mA
P
OUT
= 7.5 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency
Re
turn Los
s
-15
-25
-35
5/11/98
PTB 20082
3
e
Z Source
Z Load
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.75
5.8
-12.7
9.29
-0.6
1.80
5.8
-11.9
10.15
-0.9
1.85
5.8
-11.4
9.80
-1.3
1.90
5.8
-10.2
9.58
-1.5
1.95
6.0
-8.8
8.83
-1.5
2.00
7.1
-5.9
8.23
-1.3
2.05
7.7
-4.9
8.79
-0.7
Power Gain vs. Output Power
5
6
7
8
9
10
0.1
1.0
10.0
100.0
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
CC
= 26 V
f = 2.0 GHz
I
CQ
= 70 mA
I
CQ
= 35 mA
I
CQ
= 18 mA
Output Power vs. Supply Voltage
10
12
14
16
18
20
22
23
24
25
26
27
Supply Voltage (Volts)
Output Power (Watts)
I
CQ
= 70 mA
f = 2.0 GHz
-70
-60
-50
-40
-30
-20
1
3
5
7
9
11
13
15
Output Power (Watts-PEP)
IM
D (dBc
)
V
CC
= 28 V
I
CQ
= 40 mA
f
1
= 1999.9 MHz
f
2
= 2000.0 MHz
Intermodulation Distortion vs. Output Power
Impedance Data
V
CC
= 26 Vdc, P
OUT
= 7.5 W, I
CQ
= 70 mA
Z
0
= 50
5/6/98
PTB 20082
4
e
Typical Scattering Parameters
(V
CE
= 26 V, I
C
= 0.5 A)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.855
-176
4.80
82
0.008
-24
0.776
-172
200
0.879
-176
3.55
75
0.007
-27
0.821
-172
300
0.931
-176
1.36
40
0.003
-29
0.911
-174
400
0.961
-178
0.558
22
0.002
31
0.962
-177
500
0.977
-179
0.157
19
0.004
78
0.985
180
600
0.984
180
0.103
145
0.006
84
1.00
177
700
0.989
178
0.263
149
0.009
81
0.998
173
800
0.992
177
0.380
142
0.012
76
0.962
170
900
0.998
176
0.476
134
0.015
72
0.931
168
1000
0.998
175
0.563
125
0.018
66
0.896
166
1100
0.997
173
0.650
116
0.021
60
0.868
165
1200
0.991
172
0.740
107
0.023
54
0.833
164
1300
0.987
170
0.847
98
0.026
50
0.791
162
1400
0.974
168
0.978
87
0.030
44
0.738
161
1500
0.950
165
1.15
75
0.035
35
0.674
161
1600
0.905
163
1.39
59
0.041
24
0.594
164
1700
0.824
160
1.67
39
0.047
7
0.523
173
1800
0.708
163
1.86
12
0.050
-18
0.552
-172
1900
0.659
173
1.83
-17
0.044
-45
0.702
-167
2000
0.731
-178
1.57
-46
0.033
-69
0.839
-171
2100
0.827
-178
1.22
-69
0.023
-91
0.892
-178
2200
0.889
-180
0.919
-85
0.016
-114
0.894
178
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
L1
Ericsson Inc. Components AB 1995
EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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