This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
1
EN29SL800
Rev. B, Issue Date: 2006/04/27
FEATURES
Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Ideal for battery-powered applications.
High performance
- Access times as fast as 70 ns
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2
A typical standby current
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
High performance program/erase speed
- Byte/Word program time: 5s/7s typical
- Sector erase time: 500ms typical
JEDEC Standard Embedded Erase and
Program Algorithms
JEDEC standard DATA# polling and toggle
bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
Low Vcc write inhibit < 1.2V
Minimum 100K endurance cycle
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 5s. The
EN29SL800 features 1.8V voltage read and write operation, with access time as fast as 70ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
EN29SL800
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
2
EN29SL800
Rev. B, Issue Date: 2006/04/27
CONNECTION DIAGRAMS
A6
A5
A4
A1
A3
A2
FBGA
Top View, Balls Facing Down
A13
A9
A3
RY/BY#
WE#
A7
B6
B5
B4
B1
B3
B2
A12
A8
A4
NC
RESET#
A17
C6
C5
C4
C1
C3
C2
A14
A10
A2
A18
NC
A6
D6
D5
D4
D1
D3
D2
A15
A11
A1
NC
NC
A5
E6
E5
E4
E1
E3
E2
A16
DQ7
A0
DQ2
DQ5
DQ0
F6
F5
F4
F3
F2
BYTE#
DQ14
CE#
DQ10
DQ12
DQ8
G6
G5
G4
G3
G2
DQ15/A-1
DQ13
OE#
DQ11
Vcc
DQ9
H6
H5
H3
H2
Vss
DQ6
Vss
DQ4
DQ1
F1
G1
H4
H1
DQ3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Standard
TSOP
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
3
EN29SL800
Rev. B, Issue Date: 2006/04/27
TABLE 1. PIN DESCRIPTION
FIGURE 1. LOGIC DIAGRAM
Pin Name
Function
A0-A18 Addresses
DQ0-DQ14
15 Data Inputs/Outputs
DQ15 / A-1
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
CE# Chip
Enable
OE# Output
Enable
RESET#
Hardware Reset Pin
RY/BY# Ready/Busy
Output
WE# Write
Enable
Vcc
Supply Voltage
(1.65-2.2V)
Vss Ground
NC
Not Connected to anything
BYTE# Byte/Word
Mode
EN29SL800
DQ0 DQ15
(A-1)
A0 - A18
WE#
CE#
RY/BY#
Reset#
Byte#
OE#
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