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Электронный компонент: DF75430

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DF754
1/9
APPLICATIONS
s
Induction Heating
s
A.C. Motor Drives
s
Inverters And Choppers
s
Welding
s
High Frequency Rectification
s
UPS
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Recovery Charge
VOLTAGE RATINGS
KEY PARAMETERS
V
RRM
3500V
I
F(AV)
865A
I
FSM
8000A
Q
r
1000
C
t
rr
6.0
s
CURRENT RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
I
F
Continuous (direct) forward current
Units
Max.
Half wave resistive load, T
case
= 65
o
C
865
A
T
case
= 65
o
C
1360
A
T
case
= 65
o
C
1200
A
Half wave resistive load, T
case
= 65
o
C
515
A
T
case
= 65
o
C
800
A
T
case
= 65
o
C
670
A
3500
3400
3200
3000
DF754 35
DF754 34
DF754 32
DF754 30
Conditions
V
RSM
= V
RRM
+ 100V
Lower voltage grades available.
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
Outline type code: M779b.
See Package Details for further information.
DF754
Fast Recovery Diode
Replaces March 1998 version, DS4216-3.3
DS4216-4.0 January 2000
DF754
2/9
SURGE RATINGS
Conditions
Max.
Units
8.0
kA
320 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
-
kA
-
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 150
o
C
-
kA
-
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 100% V
RRM,
T
j
= 150
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.069
Anode dc
Clamping force 15kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.01
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.02
o
C/W
o
C/W
Cathode dc
-
0.076
o
C/W
Double side cooled
-
0.036
o
C/W
T
stg
Storage temperature range
-55
175
o
C
kN
16.5
13.5
Clamping force
-
T
vj
Virtual junction temperature
On-state (conducting)
-
150
o
C
Min.
DF754
3/9
t
rr
80
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
s, T
j
= 125
o
C
-
-
V
At T
vj
= 150
o
C
-
0.6
m
At T
vj
= 150
o
C
-
1.25
V
-
-
-
-
300
A
-
1000
C
6.0
-
s
At V
RRM
, T
case
= 150
o
C
-
mA
At 1500A peak, T
case
= 25
o
C
-
2.5
V
Conditions
Max.
I
F
= 1000A, di
RR
/dt = 100A/
s
T
case
= 150
o
C, V
R
= 100V
DEFINITION OF K FACTOR AND Q
RA1
0.5x I
RR
I
RR
dI
R
/dt
t
1
t
2
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
k = t
1
/t
2
CHARACTERISTICS
DF754
4/9
CURVES
500
1000
1500
2000
2500
3000
Instantaneous forward current I
F
- (A)
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage V
F
- (V)
Measured under pulse conditions
T
j
= 150C
T
j
= 25C
3500
4000
Fig.1 Maximum (limit) forward characteristics
DF754
5/9
0
100
200
300
400
500
Instantaneous forward current I
F
- (A)
1.0
1.25
1.5
1.75
2.0
Instantaneous forward voltage V
F
- (V)
Measured under pulse
conditions
T
j
= 150C
T
j
= 25C
0
100
200
300
400
500
Transient forward votage V
FP
- (V)
0
500
1000
1500
2000
Rate of rise of forward current dI
F
/dt - (A/
s)
T
j
= 125C limit
T
j
= 25C limit
Current
waveform
Voltage
waveform
V
FR
y
x
di =
y
dt
x
2500
Fig.2 Maximum (limit) forward characteristics
Fig.3 Transient forward voltage vs rate of rise of forward current