50
mil
2
140 mil
Bottom View
130 mil
130 mil
11 15 30
Top View
4
3
Side View
1
140 mil
DIONICS, INC.
Phone: (516) 997-7474
65 Rushmore Street Fax: (516) 997-7479
Westbury, NY 11590 Website: www.dionics-usa.com
DIG-11-15-30-SM Photovoltaic MOSFET / IGBT Driver
Features:
Optically Isolated
Constructed For Surface Mount Assembly
Suitable For Manual or Automatic Placement
Sturdy Construction, Immune To Handling Damage
Fast Turn On, Turn Off & Active Gate Discharge
Dielectrically Isolated PV IC Construction
High Open Circuit Voltage Up To 17.5V
High Isolation Resistance
Applications:
MOSFET/IGBT Driver
Medical Implant Application
Medical Solid-State Relays
A.T.E. (Automatic Test Equipment)
Medical Test Equipment
Isolation Amplifiers
Load Control From Microprocessor I/O Ports
Thermocouple Open Detectors
Description:
The DIG-11-15-30-SM Photovoltaic is a State-of-the-Art, optically-coupled floating power source used primarily to
control MOSFET/IGBT's when electrical isolation between input and output is required. It is particularly well suited for
Medical implant applications.
In addition to the infrared LED and photovoltaic (PV) diode array, each of the DIG-11-15-30-SM devices contains
circuitry that rapidly discharges the power MOSFET/IGBT gate when the LED is deactivated. The unique rapid discharge
feature of the DIG-11-15-30-SM makes it particularly useful for high side switching of MOSFET/IGBT's in Medical
applications, DC motor control and switching regulator applications. The rugged design features a hard ceramic top, 2
hard sides and of course a hard ceramic bottom. Therefore, it is ideal for manual and automatic vacuum pencil assembly
methods, with handling damage almost impossible.
The typical input circuit to the LED is a limiting resistor connected in series with the LED. When activated, the LED
emits infrared light towards the photovoltaic diode array, which then responds by generating an open circuit voltage (V
oc
)
and disabling the turn off circuitry. The self-limiting photovoltaic output of the diode array is floating and therefore, can
be safely applied directly to the MOSFET/IGBT, regardless of the source potential of the MOSFET/IGBT. When the LED
is deactivated, the active turn-off circuit discharges the capacitive input of the MOSFET/IGBT. The active turn-off
circuitry is designed such that the turn-off time of the MOSFET/IGBT is relatively independent of the input capacitance
over a range of 300 to 5000 pF.
DIG-11-15-30-SM Layout:
DIG-11-15-30-SM Configuration:
03/2002
Pad Function
Size
Number
(Inches)
1
+ Input 0.030 x 0.050
2
- Input 0.030 x 0.030
3
+ V
o
0.030 x 0.030
4
- V
o
0.030 x 0.030
DIG-11-15-30-SM Photovoltaic MOSFET/IGBT Driver
Electrical Characteristics (T
a
=25
0
C Unless otherwise specified)
Parameter & Test Condition Symbol
Min.
Max.
Unit
Open Circuit Voltage
V
oc
I
led
= 30 mA
14.0
17.5
V
Short Circuit Current
I
sc
I
led
= 30 mA
40.0
-
A
LED Forward Voltage
V
fled
I
f
= 20 mA
-
1.7
V
LED Reverse Current
I
rled
V
r
= -5V
10.0
-
A
Off State Voltage
V
off
I
off
= 10
A; I
led
= 0 mA
-
0.75
V
Isolation Voltage
1 sec; I
iso
< 100
A
V
iso
1500
-
VDC
Turn-On Time*
T
on
I
led
= 30 mA
-
100
s
C=1500pF; V
oc
up to 50%
Turn-Off Time*
T
off
I
led
= 30 mA
-
10
s
C=1500 pF
*
Sample Tested
v
Absolute Maximum Ratings (T
a
= 25
0
C)
LED Forward Current
LED Forward Current
LED Reverse Voltage
Output Discharge Current
Operating Temperature Range
Storage Temperature
Steady State
Peak 10% Duty Cycle
100 mA
150 mA
10V
15mA
-55
0
C to 125
0
C
-55
0
C to 150
0
C
PDF 
ZIP