Lead-free Green
DS30613 Rev. 3 - 2
1 of 4
DMN5L06W
www.diodes.com
Diodes Incorporated
DMN5L06W
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
50
V
Drain-Gate Voltage R
GS
1.0MW
V
DGR
50
V
Gate-Source Voltage
Continuous
Pulsed
V
GSS
20
40
V
Drain Current (Note 1)
Continuous
I
D
280
mA
Drain Current (Note 1) Pulsed
I
DM
1.5
A
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
A
D
M
J
L
F
D
B C
H
K
G
S
G
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
.
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
8
All Dimensions in mm
Source
EQUIVALENT CIRCUIT
Gate
Drain
NEW
P
RODUCT
DS30613 Rev. 3 - 2
2 of 4
DMN5L06W
www.diodes.com
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
50
V
V
GS
= 0V, I
D
= 10
mA
Zero Gate Voltage Drain Current
@ T
C
= 25C
@ T
C
= 125C
I
DSS
0.1
500
A
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
20
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
0.49
1.2
V
V
DS
= V
GS
, I
D
= 250
mA
Static Drain-Source On-Resistance
R
DS (ON)
1.6
2.2
3
4
W
V
GS
= 2.7V, I
D
= 0.2A,
V
GS
= 1.8V, I
D
= 50mA
On-State Drain Current
I
D(ON)
0.5
1.0
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
Y
fs
200
mS
V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage
V
SD
0.5
1.4
V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
5.0
pF
NEW
P
RODUCT
0
0.3
0.6
0.9
0
1
2
3
4
5
V
DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
,
I
DRAIN
CURRENT
(A)
D
,
1.2
1.5
6V
5V
3V
4V
V
= 10V
8V
6V
5V
4V
3V
GS
10V
8V
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
0.01
3
I,
D
DRAIN
CURRENT
(A)
0.001
0.1
1
0
0.5
1
1.5
2
2.5
3.5
V
= 10V
Pulsed
DS
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
T = 0 C
A
T = -25 C
A
T , CHANNEL TEMPERATURE (C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
ch
0
-50
-25
0
25
50
75
100 125 150
V
G
A
T
E
T
HRESHOLD
V
OL
T
A
GE
(V)
GS(th),
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-75
V
= 10V
I = 1mA
Pulsed
DS
D
0.1
I
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
D,
1
10
0.001
0.01
0.1
1
V
= 10V
Pulsed
GS
T = 150 C
A
T = -55 C
A
T = 125 C
A
T = -25 C
A
T = 85 C
A
T = 0 C
A
T = 25 C
A
DS30613 Rev. 3 - 2
3 of 4
DMN5L06W
www.diodes.com
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
D
10
0.1
1
0.001
0.01
0.1
V
= 5V
Pulsed
GS
T = -55 C
A
T = 150 C
A
T = -25 C
A
T = 25 C
A
T = 0 C
A
T = 125 C
A
T = 85 C
A
V
GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
0
1
2
3
4
5
6
7
8
0
5
10
15
20
T = 25 C
Pulsed
A
I = 140mA
D
I = 280mA
D
NEW
P
RODUCT
T , CHANNEL TEMPERATURE ( C)
Fig. 7
ch
Static Drain-Source On-State Resistance
vs. Channel Temperature
0.5
0.9
0.7
1.9
1.7
1.5
1.3
1.1
2.1
2.5
2.3
-50
-25
0
25
50
75
100
125 150
I = 140mA
D
V
= 10V
Pulsed
GS
I = 280mA
D
I
,
REVERSE
DRAIN
CURRENT
(A)
DR
0.001
0.01
0.1
0.5
0
1
1
V
,
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
T
= -55 C
A
T = -25 C
A
T = 25 C
A
T
= 85 C
A
T
= 125 C
A
T
= 150 C
A
V
= 0V
Pulsed
GS
DS30613 Rev. 3 - 2
4 of 4
DMN5L06W
www.diodes.com
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 11, Derating Curve - Total
A
P
,
POWER
D
ISSIP
A
TION
(mW)
d
NEW
P
RODUCT
1
I , DRAIN CURRENT (A)
D
Fig.10 Forward Transfer Admittance
vs. Drain Current
|Y
|,
FOR
W
A
RD
TRANSFER
ADMITT
ANCE
(S)
fs
0.001
0.01
0.1
0.01
0.1
1
V
= 10V
Pulsed
DS
T =
A
-55 C
T =
A
-25 C
T =
A
0 C
T = 25 C
A
T =
A
85 C
T =
A
125 C
T =
A
150 C
1
0.001
0.01
0.1
1
0
0.5
I
,
REVERSE
DRAIN
CURRENT
(A)
DR
V
,
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
SD
SOURCE-DRAIN VOLTAGE (V)
T = 25C
Pulsed
A
V
= 0V
GS
V
= 10V
GS
(Note 5)
Ordering Information
Device
Packaging
Shipping
DMN5L06W-7
SOT-323
3000/Tape & Reel
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K5L YM
K5L = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
PDF 
ZIP