Notes: 1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30871 Rev. 3 - 2
1 of 8
DCX4710H
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Diodes Incorporated
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3)
P
d
150
mW
Power Derating Factor above 45
C
P
der
1.43
mW/
C
Output Current
I
out
100
mA
Features
@ T
A
= 25
C unless otherwise specified
NEW
P
RODUCT
EQ2
R1
10k
BQ2
CQ1
1
Q1
DDTA114YE_DIE
2
R1
10k
3
4
R2
47k
5
6
EQ1
R2
10k
Q2
DDTC114EE_DIE
BQ1
CQ2
DCX4710H
100mA DUAL COMPLEMENTARY PRE-BIASED
TRANSISTORS
Mechanical Data
Built in Biasing Resistors
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
Fig. 2: Schematic and Pin Configuration
Maximum Ratings: Total Device
Case: SOT-563
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Fig. 2
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 7
Ordering Information: See Page 7
Weight: 0.005 grams (approximate)
DCX4710H is best suited for applications where the load
needs to be turned on and off using micro-controllers,
comparators or other control circuits particularly at a point of
load. It features a discrete pre-based PNP transistor which
can support continuous maximum current of 100 mA. It also
contains a pre-based NPN transistor which can be used as a
control and can be biased using a higher supply. The
component devices can be used as a part of circuit or as
stand alone discrete devices.
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Junction Operation and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor)
R
qJA
833
C/W
1
2
3
4
5
6
General Description
Fig. 1: SOT-563
@ T
A
= 25
C unless otherwise specified
Sub-Component P/N
Reference
Device Type
R1 (NOM)
R2 (NOM)
Figure
DDTA114YE_DIE
Q1
PNP
10K
W
47K
W
2
DDTC114EE_DIE
Q2
NPN
10K
W
10K
W
2
Lead-free Green
DS30871 Rev. 3 - 2
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DCX4710H
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NEW
P
RODUCT
Sub-Component Device - Pre-Biased PNP Transistor (Q1)
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Supply Voltage
V
CC
-50
V
Input Voltage
V
IN
+6 to -40
V
Output Current (dc)
I
C(max)
-100
mA
Sub-Component Device - Pre-Biased PNP Transistor (Q1)
@ T
A
= 25
C unless otherwise specified
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Supply Voltage
V
CC
50
V
Input Voltage
V
IN
-10 to +40
V
Output Current (dc)
I
C(max)
100
mA
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
-100
nA
V
CB
= -50V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
-1
mA
V
CE
= -50V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
-500
mA
V
EB
= -5V, I
C
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
V
I
C
= -10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
V
I
C
= -2 mA, I
B
= 0
Output Off Voltage
V
OH
-4.6
V
V
CC
= -5V, V
B
= -0.05V,
R
L
= 1K
W
Input Off Voltage
V
I(OFF)
-0.71
-0.5
V
V
CE
= -5V, I
C
= -100
mA
Ouput Off Current
I
O(OFF)
-1
mA
V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.066
-0.1
V
I
C
= 5 mA, I
B
= -0.25 mA
-0.078
-0.1
I
C
= -10mA, I
B
= -0.3mA
-0.06
-0.1
I
C
= -10mA, I
B
= -1mA
-0.04
-0.1
I
C
= -10mA, I
B
= -5mA
-0.99
-1.15
I
C
= -100mA, I
B
= -5mA
0.99
-1.15
I
C
= -100mA, I
B
= -10mA
Equivalent on-resistance*
R
CE(SAT)
3.5
W
I
C
= -100mA, I
B
= -10mA
DC Current Gain
h
FE
50
V
CE
= -5V, I
C
= -1 mA
130
V
CE
= -5V, I
C
=- 5 mA
180
V
CE
= -5V, I
C
= -50 mA
100
V
CE
= -5V, I
C
= -100 mA
140
V
CE
= -10V, I
C
= -5 mA
Output On Voltage
V
OL
-0.185
-0.22
V
V
CC
= -5V, V
B
= -2.5V,
R
L
= 1K
W
Input On Voltage (Load is on)
V
I(ON)
-1.25
-0.9
V
V
O
= -0.3V, I
C
= -2 mA
Input Current
I
i
-0.88
mA
V
I
= -5V
Base-Emitter Turn-on Voltage
V
BE(ON)
-0.72
-0.8
V
V
CE
= -5V, I
C
= 100
mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.15
-1.25
V
I
C
= 1mA, I
B
= 50
mA
Input Resistor +/- 30% (Base)
DR1
7
10
13
K
W
Pull-up Resistor (Base to Vcc supply)
R2
32
47
62
K
W
Resistor Ratio
D(R2/R1)
20
20
%
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (gain bandwidth product)
f
T
200
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Collector capacitance (Ccbo-Output
Capacitance)
C
C
5
pF
V
CB
= -10V, I
E
= 0A,
f = 1MHz
DS30871 Rev. 3 - 2
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DCX4710H
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P
RODUCT
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
( Continued )
Pre-Biased NPN Transistor (Q2)
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
100
nA
V
CB
= 50V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
1
mA
V
CE
= 50V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
500
mA
V
EB
= 5V, I
C
= 0
Collector-Base Breakdown Voltage
V
(BR) CBO
50
V
I
C
= 10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR) CEO
50
V
I
C
= 2 mA, I
B
= 0
Output Off Voltage
V
OH
4.6
V
V
CC
= 5V, V
B
= 0.05V,
R
L
= 1K
W
Input Off Voltage
V
I(OFF)
1.2
0.8
V
V
CE
= 5V, I
C
= 100
mA
Ouput Current
I
O (OFF)
1
mA
V
CC
= 50V, V
I
= 0V
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
V
CE (SAT)
0.06
0.1
V
I
C
= 5 mA, I
B
= 0.25 mA
0.06
0.1
I
C
= 10mA, I
B
= 0.5mA
0.042
0.06
I
C
= 10mA, I
B
= 1mA
0.026
0.04
I
C
= 10mA, I
B
= 5mA
0.272
0.35
I
C
= 100mA, I
B
= 5mA
0.28
0.35
I
C
= 100mA, I
B
= 10mA
Equivalent on-resistance*
R
CE (SAT)
3.5
W
I
C
= 100mA, I
B
= 10mA
DC Current Gain
h
FE
12
V
CE
= 5V, I
C
= 1 mA
45
V
CE
= 5V, I
C
= 5 mA
130
V
CE
= 5V, I
C
= 50 mA
70
V
CE
= 5V, I
C
= 100 mA
40
58
V
CE
= 10V, I
C
= 5 mA
Output On Voltage
V
OL
0.12
0.2
V
V
CC
= 5V, V
B
= 2.5V,
R
L
= 1K
W
Input On Voltage
V
I (ON)
2.8
1.6
V
V
O
= 0.3V, I
C
= 2 mA
Input Current
I
i
0.88
mA
V
I
= 5V
Base-Emitter Turn-on Voltage
V
BE(ON)
1.195
V
V
CE
= 5V, I
C
= 100
mA
Base-Emitter Saturation Voltage
V
BE(SAT)
1.02
V
I
C
= 1mA, I
B
= 50
mA
Input Resistor +/- 30% (Base)
R1
7
10
13
K
W
Resistor Ratio
(R2/R1)
0.8
1
1.2
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain bandwidth product)
f
T
250
MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
Collector capacitance (Ccbo-Output
Capacitance)
C
C
4
pF
V
CB
= 10V, I
E
= 0A,
f = 1MHz
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
DS30871 Rev. 3 - 2
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NEW
P
RODUCT
Characteristics Curves of PNP Transistor (Q1)
@ T
amb
= 25
C unless otherwise specified
10
V
,
COLLECT
OR
VOL
T
AGE
(V)
CE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 6
vs. V
CE(SAT)
0.1
1
100
1000
0.01
0.1
1
10
100
Ic/Ib = 10
T = -55 C
A
T = 150 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
10
h
,
DC
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 5 DC Current Gain vs. I
C
0
50
100
150
200
250
300
350
400
0.1
1
100
1000
T = 150 C
A
T = -55 C
A
T = 25 C
A
T = 125 C
A
T = 85 C
A
V
= 5V
CE
10
V
,
COLLECT
OR
VOL
T
AGE
(V)
CE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 7
vs. V
CE(SAT)
0.1
1
100
1000
0.01
0.1
1
10
100
Ic/Ib = 20
T = 150 C
A
T = -55 C
A
T = 125 C
A
T = 25 C
A
T = 85 C
A
I
,
COLLECT
OR
CURRENT
(A)
C
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 4 V
vs. I
CE
C
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
0.2
0.4 0.6 0.8
1
1.2 1.4 1.6
1.8
2
lb = 1.25mA
lb = 1.5mA
lb = 1.75mA
lb = 1mA
lb = 0.75mA
lb = 0.25mA
lb = 0.5mA
lb = 2.25mA
lb = 2mA
Typical Characteristics
@ T
amb
= 25
C unless otherwise specified
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T
Fig. 3 Power Derating Curve
A
, AMBIENT TEMPERATURE (C)
0
0
50
100
150
200
250
25
50
75
100
125
150
175
DS30871 Rev. 3 - 2
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DCX4710H
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NEW
P
RODUCT
10
h
,
DC
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 12 DC Current Gain vs. I
C
0.1
1
100
1000
0
50
100
150
200
250
300
V
= 5V
CE
T = 150 C
A
T = -55 C
A
T = 125 C
A
T = 25 C
A
T = 85 C
A
Characteristics Curves of NPN Transistor (Q2)
@ T
amb
= 25
C unless otherwise specified
10
V
,
BASE-EMITTER
V
OL
T
A
GE
(V)
BE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 10
vs. V
BE(SAT)
0.1
1
100
0
3
6
9
12
15
Ic/Ib = 10
T = 150 C
A
T = -55 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
I , OUTPUT CURRENT (mA)
C
Fig. 11 Input Voltage vs. Collector Current
V,
I
N
P
U
T
V
O
L
T
AGE
(V)
I(ON)
0
3
6
9
12
15
0.1
1
10
100
V
= 0.3V
CE
T = -55 C
A
T = 150 C
A
T = 125 C
A
T = 25 C
A
T = 85 C
A
I
,
COLLECT
OR
CURRENT
(A)
C
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 13 V
vs. I
CE
C
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
0.2
0.4 0.6 0.8
1
1.2 1.4 1.6
1.8
2
l = 1.25mA
b
l = 1.5mA
b
l = 1.75mA
b
l = 1mA
b
l = 0.75mA
b
l = 0.25mA
b
l = 0.5mA
b
l = 2mA
b
10
V
,
BASE-EMITTER
V
OL
T
A
GE
(V)
BE(ON)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 8
vs. V
BE(ON)
0.1
1
100
0
1.5
3
4.5
6
7.5
9
10.5
12
13.5
15
V
= 5V
CE
T = -55 C
A
T = 150 C
A
T = 125 C
A
T = 25 C
A
T = 85 C
A
10
V
,
BASE-EMITTER
V
OL
T
A
GE
(V)
BE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 9
vs. V
BE(SAT)
0.1
1
100
0
1
2
3
4
5
6
7
8
Ic/Ib = 20
T = 150 C
A
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
DS30871 Rev. 3 - 2
6 of 8
DCX4710H
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NEW
P
RODUCT
10
V
,
COLLECT
OR
EMITTER
SA
TURA
TION
VOL
T
AGE
(V)
CE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 14
vs. V
CE(SAT)
0.1
1
100
1000
0.01
0.1
1
10
100
Ic/Ib = 10
T = 150 C
A
T = -55 C
A
T = 125 C
A
T = 25 C
A
T = 85 C
A
10
V
,
COLLECT
OR
EMITTER
SA
TURA
TION
VOL
T
AGE
(V)
CE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 15
vs. V
CE(SAT)
0.1
1
100
1000
0.01
0.1
1
10
100
Ic/Ib = 20
T = -55 C
A
T = 150 C
A
T = 25 C
A
T = 125 C
A
T = 85 C
A
10
V
,
BASE-EMITTER
V
OL
T
A
GE
(V)
BE(ON)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 16
vs. V
BE(ON)
0.1
1
100
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
V
= 5V
CE
T = -55 C
A
T = 150 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
10
V
,
COLLECT
OR
EMITTER
SA
TURA
TION
VOL
T
AGE
(V)
CE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 14
vs. V
CE(SAT)
0.1
1
100
1000
0.01
0.1
1
10
100
Ic/Ib = 10
T = 150 C
A
T = -55 C
A
T = 125 C
A
T = 25 C
A
T = 85 C
A
10
V
,
BASE-EMITTER
V
OL
T
A
GE
(V)
BE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 17
vs. V
BE(SAT)
0.1
1
100
0
3
6
9
12
15
18
21
24
27
30
Ic/Ib = 20
T = -55 C
A
T = 150 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
10
V
,
BASE-EMITTER
S
A
T
URA
TION
VOL
T
AGE
(V)
BE(SA
T)
I , COLLECTOR CURRENT (mA)
I
C
C
Fig. 18
vs. V
BE(SAT)
0.1
1
100
0
3
6
9
12
15
18
21
24
27
30
Ic/Ib = 10
T = -55 C
A
T = 150 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
10
V
,
INPUT
V
OL
T
A
GE
(V)
I(ON)
I , COLLECTOR CURRENT (mA)
Input Voltage vs. Output Current
C
Fig. 19
0.1
1
100
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
V
= 0.3V
CE
T = -55 C
A
T = 150 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
DS30871 Rev. 3 - 2
7 of 8
DCX4710H
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NEW
P
RODUCT
Ordering Information
(Note 5)
Device
Marking Code
Packaging
Shipping
DCX4710H-7
C02
SOT-563
3000/Tape & Reel
Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
C02YM
Fig. 20
C02 = Product Type Marking Code
YM = Date Code Marking
Y = Year e.g., T = 2006
M = Month e.g., 9 = September
Date Code Key
Year
2006
2007
2008
2009
Code
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30871 Rev. 3 - 2
8 of 8
DCX4710H
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A
M
L
B C
H
K
G
D
C02YM
NEW
P
RODUCT
Fig. 21
X
Z
Y
C
E
E
G
Fig. 22
IMPORTANT NOTICE
LIFE SUPPORT
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes incorporated.
Mechanical Details
Suggested Pad Layout: (Based on IPC-SM-782)
SOT-563
Dim
Min
Max
Typ
A
0.15
0.3
0.25
B
1.1
1.25
1.2
C
1.55
1.7
1.6
D
0.5
G
0.9
1.1
1
H
1.5
1.7
1.6
K
0.56
0.6
0.6
L
0.15
0.25
0.2
M
0.1
0.18
0.11
All Dimensions in mm
Figure 4
Dimensions
SOT-563
Z
2.2
G
1.2
X
0.375
Y
0.5
C
1.7
E
0.5
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