CYStech Electronics Corp.
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTP8550SA3
CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
BTP8550SA3
Description
The BTP8550SA3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
Large collector current , I
C
= -700mA
Low V
CE(sat)
Complementary to BTN8050SA3
.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-25
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-700
mA
Base Current
I
B
-100
mA
Power Dissipation
Pd
625
mW
Thermal Resistance, Junction to Ambient
R
JA
200
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
TO-92
BTP8550SA3
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 2/4
BTP8550SA3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
-25 -
- V I
C
=-10A
BV
CEO
-20 -
- V
I
C
=-1mA
BV
EBO
-5 - - V
I
E
=-10A
I
CBO
- - -1 A
V
CB
=-20V
*V
CE(sat)
-
- -0.
5 V
I
C
=-500mA, I
B
=-50mA
*V
BE(on)
-
- -1 V
V
CE
=-1V, I
C
=-150mA
*h
FE
1
100 - 500 -
V
CE
=-1V, I
C
=-150mA
*h
FE
2 - 100 - -
V
CE
=-1V, I
C
=-500mA
f
T
150 - -
MHz
V
CE
=-10V, I
C
=-20mA, f=100MHz
Cob - - 10
pF
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
1
Rank C
D
E
Range 100~180 160~300 250~500
CYStech Electronics Corp.
Spec. No. : C312A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 3/4
BTP8550SA3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Current Gain---HFE
VCE = 1V
VCE = 2V
VCE = 5V
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT) @ IC=10IB
VCE(SAT) @ IC=20IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
On Voltage vs Collector Current
100
1000
10000
1
10
100
1000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(ON) @ VCE=1V
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C313A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 4/3
BTP8550A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
P8550S
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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