CYStech Electronics Corp.
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 1/4
BTD2098M3
CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTD2098M3
Features
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 3A / 0.1A
Excellent DC current gain characteristics
Complementary to BTB1386M3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
5 A(DC)
Collector Current
IC
8 *1
A(Pulse)
0.6
1 *2
Power Dissipation
Pd
2 *3
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : *1 Single pulse , Pw=10ms
*2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm.
*3 When mounted on a 40*40*0.7mm ceramic board.
BTD2098M3
SOT-89
BBase
CCollector
EEmitter
B C E
CYStech Electronics Corp.
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 2/4
BTD2098M3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BVCBO 40 - - V
IC=50uA,
IE=0
BVCEO 20 - - V
IC=1mA,
IB=0
BVEBO 6 - - V
IE=50uA,
IC=0
ICBO - - 0.5
uA
VCB=40V.
IE=0
IEBO - - 0.5
uA
VEB=5V,IC=0
*VCE(sat) - 0.25 1.0 V
IC=3A,
IB=0.1A
*hFE 120 - 820 -
VCE=2V,
IC=500mA
fT
- 150 - MHz
VCE=6V,
IC=50mA,
f=100MHz
Cob
-
30
50
pF
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Classification Of hFE
Rank Q R S T
Range 120~270 180~390 270~560 390~820
Characteristic Curves
Current Gain vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
HFE@VCE=2V
Saturation Voltage vs Collector Current
1
10
100
1000
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage-(mV)
VCESAT@IC=20IB
CYStech Electronics Corp.
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 3/4
BTD2098M3
CYStek Product Specification
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage-(mV)
VCE(SAT)@IB=40IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage-(mV)
VBE(SAT)@IC=20IB
Power Derating Curve
0.0
0.5
1.0
1.5
2.0
2.5
0
50
100
150
Ambient Temperature---Ta( )
Power Disspation---Pd(W)
Page1 Note
*3
Page1 Note
*
2
CYStech Electronics Corp.
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 4/4
BTD2098M3
CYStek Product Specification
SOT-89 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1732
0.1811 4.40 4.60 F 0.0583
0.0598 1.48 1.527
B 0.1594
0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591
0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945
0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.01417
0.0201 0.36 0.51
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
E
F
G
C
B
A
I
D
H
3
2
1
Marking:
AH
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