CYStech Electronics Corp.
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 1/4
BTB1426A3
CYStek Product Specification
Low V
CE(SAT)
PNP Epitaxial Planar Transistor
BTB1426A3
Description
The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications.
Features
High DC current gain and excellent h
FE
linearity.
Low Saturation Voltage
V
CE(sat)
=-0.5V(max)(I
C
=-2A, I
B
=-100mA).
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-20 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current(DC)
I
C
-3
Collector Current(Pulsed)(
Note 1)
I
CP
-5
(Note )
A
Power Dissipation
Pd
750
mW
Thermal Resistance, Junction to Ambient
R
JA
167
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : Single pulse, Pw10ms, Duty Cycle2%.
BTB1426A3
TO-92
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 2/4
BTB1426A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
-20 -
- V
I
C
=-50A
BV
CEO
-20 -
- V
I
C
=-1mA
BV
EBO
-6 - - V
I
E
=-50A
I
CBO
- - -0.1
A
V
CB
=-20V
I
EBO
- - -0.1
A
V
EB
=-5V
*V
CE(sat)
- - -0.5 V
I
C
=-2A, I
B
=-0.1A
*h
FE
120 - 820 -
V
CE
=-2V, I
C
=-100mA
f
T
-
240
-
MHz
V
CE
=-2V, I
C
=-500mA, f=100MHz
Cob - 35 - pF
V
CB
=-10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
Rank Q R S T
Range 120~270 180~390 270~560 390~820
CYStech Electronics Corp.
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 3/4
BTB1426A3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
VCE=1V
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=40IB
ON Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
10000
Collector Current IC---(mA)
ON Voltage---(mV)
VBE(ON)@VCE=1V
Power Derating Curve
0
100
200
300
400
500
600
700
800
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C816A3-H
Issued Date : 2003.07.02
Revised Date :
Page No. : 4/4
BTB1426A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
B1426
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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