Page 1 of 10
UPF1060 Rev. 2
UPF1060
60W, 1.0 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with
a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-
Carrier Power Amplifiers in Class A or AB operation.
ALL GOLD metal system for highest reliability.
Industry standard package.
Low intermodulation distortion of 30dBc at 60W (PEP).
Package Type 440134
PN: UPF1060P
Package Type 440095
PN: UPF1060F
Page 2 of 10
UPF1060 Rev. 2
UPF1060
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, gate connected to source
BV
DSS
65 Volts
Gate to Source Voltage
BV
GSS
+/-
20 Volts
Total Device Dissipation @ Tcase = 70
o
C
Derate above 70
o
C
P
D
118
0.9
Watts
W/
o
C
Storage Temperature Range
T
STG
-65 to +150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristics Symbol
Typical
Unit
Thermal Resistance, Junction to Case
jc
1.1
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Voltage, gate connected to source
(V
GS
= 0, I
DS
= 1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
= 28V, V
GS
= 0)
I
DSS
- -
1.0
mA
Gate to Source Leakage current
(V
GS
= 20V, V
DS
= 0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
= 10V, I
DS
= 1mA)
V
TH
2.0
3.3
5.0
Volts
Gate Quiescent Voltage
(V
DS
= 26 V, I
DS
= 400mA)
V
GS
(on) 3.0 4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
= 10V, I
DS
= 1A
V
DS
(on) - 0.18
-
Volts
Forward Transconductance
(V
DS
= 10V, I
D
= 5A)
G
M
2.2
2.8
-
S
Page 3 of 10
UPF1060 Rev. 2
UPF1060
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz)
C
ISS
-
77
-
pF
Output capacitance
(V
DS
= 26V, V
GS
=0V, freq= 1MHz)
C
OSS
- 40
-
pF
Feedback capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz
C
RSS
-
2.8
-
pF
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
Linear Power Gain, Single Tone
(V
DS
=26V, I
DQ
=400mA, P
OUT
=10W, f=894 MHz)
G
L
11.0
12.5
-
dB
Compressed Power Gain, Single Tone
(V
DS
=26V, I
DQ
=400mA, P
OUT
=60W, f=894 MHz)
G
P
10.5
11.5
-
dB
Drain Efficiency, Single Tone
(V
DS
=26V, I
DQ
=400mA, P
OUT
=60W, f=894 MHz)
D
45 52 -
%
Intermodulation Distortion, Two Tone
(V
DS
=26V, I
DQ
=400mA, P
OUT
=60W PEP
f1=864 MHz, f2=894.1MHz)
IMD -
-32
-30
dBc
Load Mismatch Tolerance
(V
DS
=26V, I
DQ
=400mA, P
OUT
=60W, f=894 MHz)
VSWR* 10:1 - -
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 4 of 10
UPF1060 Rev. 2
UPF1060
Power Gain vs Output Power
8
9
10
11
12
13
14
15
16
17
20
25
30
35
40
45
50
P
OUT
, Output Power (dBm)
G
PE
, Gain (dB
)
200 m A
400 m A
I
DQ
= 600 m A
V
DD
= 26 V
f = 894 MHz
Intermodulation Distortion vs Output Power
-80
-70
-60
-50
-40
-30
-20
20
25
30
35
40
45
50
55
P
OUT
, Output Pow er (dBm), PEP
I
M
D,
I
n
termodul
ati
on Di
storti
on (dBc)
3rd Order
5th
7th
V
DD
= 26 V
f1 = 894.0 MHz
f2 = 894.1 MHz
I
DQ
= 400 mA
Page 5 of 10
UPF1060 Rev. 2
UPF1060
Intermodulation Distortion vs Output Power
-60
-50
-40
-30
-20
-10
20
25
30
35
40
45
50
55
P
OUT
, Output Power (dBm), PEP
IM
D3, 3rd Order Intermodulation Distortio
n
(dBc)
I
DQ
= 200 m A
400 m A
600 m A
V
DD
= 26 V
f1 = 894.0 MHz
f2 = 894.1 MHz
Power Gain & Efficiency vs Output Power
8
9
10
11
12
13
14
15
20
25
30
35
40
45
50
P
OUT
, Output Power (dBm)
G
PE
, P
o
wer Gain (dB
)
0
10
20
30
40
50
60
70
Efficiency (%
)
V
DD
= 26 V
I
DQ
= 400 mA
f = 894 MHz
G
PE
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