UGF09085
ALL GOLD metal system for highest reliability
Industry standard package
Suggested alternative to the MRF9085
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Package Type 440133
PN: UGF09085P
Package Type 440171
PN: UGF09085F
Typical CDMA Performance (IS-97)
Average Load Power 20 W
PE 26%
Power Gain 16 dB
ACPR -40dBc @ 750kHz (30 kHz BW)
-55dBc @ 1.98MHz (30 kHz BW)
90W, 865-880 MHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for broadband Commercial and Industrial applications in the frequency band 865 to
890 MHz. Rated with a minimum output power of 90W, it is ideal for large signal common source
Power Amplifier in class AB operated at 26V.
UGF09085
Rev.
2
UGF09085
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
V
DSS
65 Volts
Gate to Source Voltage
V
GSS
+15 to .5
Volts
Total Device Dissipation @ Tcase = 70
o
C
Derate above 70
o
C
P
D
Watts
W/
o
C
Storage Temperature Range
T
stg
-65
to
+150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristic Symbol
Typical
Unit
Thermal Resistance, Junction to Case
JC
-
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
=0, I
D
=1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
=26V, V
GS
=0)
I
DSS
- -
1.0
mA
Gate to Source Leakage current
(V
GS
=15V, V
DS
=0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
=10V, I
D
=1mA)
V
GS(th)
- 3.5
-
Volts
Gate Quiescent Voltage
(V
DS
=26 V, I
D
=900mA)
V
GS(Q)
3.0 4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
=10V, I
D
=2A)
V
DS(on)
- 0.1
-
Volts
Forward Transconductance
(V
DS
=10V, I
D
=5A)
Gm - -
-
S
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance
(V
DS
=26V, V
GS
=0V, f = 1MHz)
C
ISS
- - -
pF
Output capacitance *
(V
DS
= 26V, V
GS
=0V, f = 1MHz)
C
OSS
- - -
pF
Feedback capacitance *
(V
DS
=26V, V
GS
=0V, f = 1MHz)
C
RSS
- - -
pF
* Part is internally matched on input.
UGF09085
Rev.
2
UGF09085
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
CW. Power Gain, P
out
=90W
V
DD
=26V, I
DQ
=700mA
f= 865-880 MHz
Gp -
16
-
dB
CW. Output power @ 1dB compression point
V
DD
=26V, I
DQ
=700mA
f=880 MHz
P1dB 90 105
-
W
CW. Drain Efficiency, P
out
= 90 W,
f=880 MHz, V
DD
=26V, I
DQ
=700mA
D
- 45
-
%
Two-Tone Common-Source Amplifier Power Gain
V
DD
=26V, I
DQ
=700mA, P
out
= 90 W PEP
f
1
=880 MHz and f
2
=880.1 MHz
G
TT
-
16.2
-
dB
Two-Tone Intermodulation Distortion
V
DD
=26V, I
DQ
=700mA, P
out
= 90 W PEP
f
1
=880 MHz and f
2
=880.1 MHz
I
MD
-28.5
-30
-
dBc
Two-Tone Drain Efficiency
V
DD
=26V, I
DQ
=700mA, P
out
= 90 W PEP
f
1
=880 MHz and f
2
=880.1 MHz
D2
35 38 -
%
Input Return Loss
V
DD
=26V, P
out
= 90 W PEP, I
DQ
=700mA
f =865 - 880 MHz, Tone Spacing =100kHz
IRL -
12
-
dB
Load Mismatch Tolerance
V
DS
=26V, I
DQ
= 700 mA, Pout=90W, f=880 MHz
VSWR 10:1 - -
Note: This transistor has been designed to work in the Motorola MRF9085 test fixture. Performance has
been verified within that fixture.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
UGF09085
Rev.
2
UGF09085
Pow er Gain, Efficiency, ACPR vs Output Pow er
7
9
11
13
15
17
1
10
20
30
Output Pow er (Watts) AVG
Power Gain (dB)
-80
-60
-40
-20
0
20
40
ACPR (dB), Efficiency (%)
P G
Efficiency
750KHz
1.98M Hz
Vdd=26 V,
Idq=700mA
f=880MHz
Pow er Gain, Efficiency, IMD vs Output Pow er
6
8
10
12
14
16
18
10
20
30
40
50
60
70
80
90 100
Pout, Output Pow er (Watts) PEP
Power Gain (dB)
-60
-40
-20
0
20
40
60
IMD (dBc), Drain Efficiency
(%)
P G
Effiency
IM D
Vdd=26V, Idq=700mA
f1=880, f2=880.1MHz
UGF09085
Rev.
2
UGF09085
Intermodulation Distortion Products vs Output Pow er
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
Pout, Output Pow er (Watts) PEP
IMD, Intermodulation
Distortion (dBc)
3rd Order
5th Order
7th Order
Vdd=26V,Idq=700mA
f1=880, f2=880.1MHz
Pow er Gain, Efficiency vs Output Pow er
12
13
14
15
16
17
18
1
10
20
30
40
50
60
70
80
90 100
Output Pow er (Watts) CW AVG
Power Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
P G
Efficiency
Vdd=26 V, Idq=700mA
f=880MHz Single Tone
UGF09085
Rev.
2
UGF09085
Rev.
2
UGF09085
Pow er Gain, Efficiency, IMD vs Frequency
11
12
13
14
15
16
17
18
865
870
875
880
885
890
Frequency (MHz)
Power Gain (dB)
-40
-30
-20
-10
0
10
20
30
40
50
IMD (dBc), Drain
Efficiency (%)
Power Gain
Efficiency
IM D
Vdd=26 V,Idq=700mA
Pout=90 Watts(PEP)
Two-Tone, 100KHz Spacing
Note: Class AB broadband circuit performance.
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