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Электронный компонент: UGF09030

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Page 1 of 7
UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030









Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a
minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
Power Amplifiers in Class AB operation.
30W, 1 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
ALL GOLD metal system for highest reliability
Industry standard package
Suggested alternative to the MRF9030
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity

Application Specific Performance, 870MHz

GSM: 30
Watts 17.50dB
EDGE:
13 Watts
17.50dB

IS95 CDMA:
3.5 Watts
17.50 dB

CDMA2000: TBD
Watts
17.50dB
Package Type 440095
PN: UGF9030F
Package Type 440109
PN: UGF9030P
Page 2 of 7
UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
V
DSS
65 Volts
Gate to Source Voltage
V
GSS
+15 to .5
Volts
Total Device Dissipation @ Tcase = 70
o
C
Derate above 70
o
C
P
D
-
Watts
W/
o
C
Storage Temperature Range
T
stg
-65 to
+150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristic Symbol
Typical
Unit
Thermal Resistance, Junction to Case
JC
-
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
=0, I
D
=1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
=26V, V
GS
=0)
I
DSS
- -
1.0
mA
Gate to Source Leakage current
(V
GS
=15V, V
DS
=0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
=10V, I
D
=1mA)
V
GS(th)
- 3.5
-
Volts
Gate Quiescent Voltage
(V
DS
=26 V, I
D
=350mA)
V
GS(Q)
3.0 4.0
6.0
Volts
Drain to Source On Voltage
(V
GS
=10V, I
D
=1A)
V
DS(on)
- 0.3
-
Volts
Forward Transconductance
(V
DS
=10V, I
D
=5A)
Gm - -
-
S

















Page 3 of 7
UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance *
(V
DS
=26V, V
GS
=0V, f = 1MHz)
C
ISS
- -
-
pF
Output capacitance *
(V
DS
= 26V, V
GS
=0V, f = 1MHz)
C
OSS
- - -
pF
Feedback capacitance *
(V
DS
=26V, V
GS
=0V, f = 1MHz)
C
RSS
- - -
pF

RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
CW Small Signal Gain, Pout=0.1W
V
DD
=26V, I
DQ
=350mA
G
L
-
17.5
-
dB
CW Power Gain, P
out
= 30 W
V
DD
=26V, I
DQ
=350mA
G
P
-
17
-
dB
CW Drain Efficiency, P
out
= 30 W,
f=870 MHz, V
DD
=26V, I
DQ
=350mA,
D
- 45
-
%
Two-Tone Common-Source Amplifier Power Gain
V
DD
=26V, I
DQ
=350mA, P
out
= 30 W PEP
f
1
=870 MHz and f
2
=870.1 MHz
G
TT
-
17.5
-
dB
Two-Tone Inter-modulation Distortion
V
DD
=26V, I
DQ
=350mA, P
out
= 30 W PEP
f
1
=870 MHz and f
2
=870.1 MHz
I
MD
-
-36
-
dBc
Two-Tone Drain Efficiency
V
DD
=26V, I
DQ
=350mA, P
out
= 30 W PEP
f
1
=870 MHz and f
2
=870.1 MHz
D2
- 36
-
%
Input Return Loss
V
DD
=26V, P
out
= 30 W PEP, I
DQ
=350mA
f
1
=850 MHz and 900 MHz, Tone Spacing =
100kHz
IRL - 10
-
dB
Load Mismatch Tolerance
V
DS
=26V, I
DQ
= 350 mA, Pout=30W, f=900 MHz
VSWR* 10:1 - -

Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.










Page 4 of 7
UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030



















































V
DD
= 26V
I
DQ
= 350mA
Freq = 870MHz
Power Gain & Efficiency vs Output Power
12
13
14
15
16
17
18
19
36.7
38.55
40.68
42.77
44.54
46.27
P
OUT
, Output Power (dBm)
Power Gain (dB)
0
10
20
30
40
50
Efficiency (%)
V
DD
= 26V
I
DQ
= 350mA
Freq = 870MHz
Intermodulation Distortion vs Output Power
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
42
42
41
41
40
40
39
39
P
OUT
Output Power (dBm) PEP
IMD3,3rd Order IMD (dBc)
V
DD
= 26V
I
DQ
= 350mA
Freq 1 = 891.0MHz
Freq 2 = 891.1MHz
Page 5 of 7
UGF09030 Rev. 2
Specifications subject to change without notice
http://cree.com/
UGF09030






Product Dimensions
UPF0930F Package Number 440095