c
2002
cosmo
ELECTRONICS CORPORATION
http://www.cosmo-ic.com
54
1. Anode
2. Cathode
3. Emitter
4. Collector
Features
1. Opaque type, mini-flat package.
2. Subminiature type
(The volume is smaller than that of our conventional DIP type by
as far as 30%).
3. Current transfer ratio
(CTR:MIN.50% at I
F
=5mA, Vce=5V)
4. Isolation voltage between input and output (Viso:3750Vrms).
Applications
1. Hybrid substrates that reguire high density mounting.
2. Programmable controllers.
Absolute Maximum Ratings
(Ta=25C)
Electro-optical Characteristics
(Ta=25C)
UL 1577 (File No.E169586)
TOLERANCE :+ 0.2mm
t=0.254+0.05mm
Schematic : Top View
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
50
mA
Peak forward current
I
FM
1
A
Reverse voltage
V
R
6
V
Power dissipation
P
70
mW
Output
Collector-emitter voltage
V
CEO
60
V
Emitter-collector voltage
V
ECO
5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Total power dissipation
Ptot
170
mW
Isolation voltage 1 minute
Viso
3750
Vrms
Operating temperature
Topr
-30 to +100
C
Storage temperature
Tstg
-40 to +125
C
Soldering temperature 10 seconds
Tsol
260
C
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
=20mA
--
1.2
1.4
V
Reverse current
I
R
V
R
=4V
--
--
10
uA
Terminal capacitance
Ct
V=0, f=1kHz
--
30
250
pF
Output
Collector dark current
I
CEO
V
CE
=20V, I
F
=0
--
--
0.1
uA
Collector-emitter breakdown voltage
BV
CEO
I
C
=0.1mA, I
F
=0
60
--
--
V
Emitter-collector breakdown voltage
BV
ECO
I
E
=100uA, I
F
=0
5
--
--
V
Transfer
Current transfer ratio
CTR
I
F
=5mA, V
CE
=5V
50
--
600
%
charac-
Collector-emitter saturation voltage
V
CE
(sat)
I
F
=20mA, I
C
=1mA
--
0.1
0.3
V
teristics
Isolation resistance
Riso
DC500V, 40 to 60%RH
5X10
10
10
11
--
ohm
Floating capacitance
Cf
V=0, f=1MH
Z
--
0.6
1.0
pF
Respone time (Rise)
tr
V
CE
=2V, I
C
=2mA, R
L
=100ohm
--
5
20
us
Respone time (Fall)
tf
--
4
20
us
Outside Dimension : Unit
(mm)
KPC357NT
Mini-flat package General purpose
Photo Coupler
Classification table of current transfer ratio is
shown below.
Hemar AG, Fendler 50, CH-5524 Nesselnbach, Tel: +41 (0)56 618 31 41, Fax +41 (0)56 618 31 42 http://www.hemar.ch
Fig.2 Diode Power Dissipation vs.
Ambient Temperature
Ambient temperature Ta (C)
Diode power dissipation P (mW)
Fig.1 Forward Current vs. Ambient
Temperature
Ambient temperature Ta (C)
Forward current I
F
(mA)
Fig.3 Collector Power Dissipation vs.
Ambient temperature
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW)
Fig.5 Peak Forward Current vs. Duty
Ratio
Duty ratio
Peak forward current I
FM
(mA)
Fig.6 Forward Current vs. Forward
Voltage
Forward voltage V
F
(V)
Forward current I
F
(mA)
Fig.8 Collector Current vs. Collector-
emitter Voltage
Collector-emitter voltage V
CE
(V)
Collector current Ic (mA)
Fig.9 Relative Current Transfer Ratio
vs. Ambient Temperature
Ambient Temperature Ta (C)
Relative current transfer ratio (%)
Fig.11 Collector Dark Current vs.
Ambient Temperature
Ambient Temperature Ta (C)
Collector dark current I
CEO
(A)
Fig.4 Total Power Dissipation vs.
Ambient temperature
Ambient temperature Ta (C)
T
otal power dissipation P
C
(mW)
Fig.7 Current Transfer Ratio vs.
Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
Fig.10 Collector-emitter Saturation
Voltage vs. Ambient Temperature
Ambient Temperature Ta (C)
Collector-emitter saturation voltage V
CE
(SA
T) (V)
Fig.12 Response Time vs. Load
Resistance
Load resistance R
L
(K ohm)
Response T
ime (us)
KPC357NT
c
2002
cosmo
ELECTRONICS CORPORATION
http://www.cosmo-ic.com
55
Hemar AG, Fendler 50, CH-5524 Nesselnbach, Tel: +41 (0)56 618 31 41, Fax +41 (0)56 618 31 42 http://www.hemar.ch
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