The CMI-5505-CHR is a packaged single
N-channel MOSFET with a typical on-state
resistance of 9m
. This hermetically sealed
package features the latest advanced MOSFET
and CMI PEPTM packaging technology. The
small size and surface mount packaging al-
lows for a high degree of flexibility. Typical
applications include switching power supplies,
motor controls, inverters, choppers, audio am-
plifiers, and high energy pulse circuits.
COMPOSITE MODULE INCORPORATED
61 Union St Attleboro Massachusetts 02703
Phone: (508)226-6969
Fax: (508)226-0938
E-mail: sales@cmodules.com
CMI-5505-CHR Features:
u
SMALL CASE SIZE
u
SURFACE MOUNT
u
HERMETIC PACKAGE
u
LOW R
DS(on)
u
FAST SWITCHING
u
EASE OF PARALLELING FOR
ADDED POWER
Description:
V
DSS
= 50V
R
DS(ON)
= .009
I
D
= 55A
SURFACE MOUNT
MOS-PEPTM PACKAGING
PACKAGE DIMENSIONS: (Dimensions in inches)
Top View
Bottom View
Pin Connections:
CMI-5505-CHR
1. Source 2. Gate 3. Drain
.400
.500
.130
96% Alumina
.035
.180
.180
.180
.275
.390
Drain
Gate
Source
1
2
3
3
1
2
.400
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNITS
TEST
CONDITIONS
Drain to Source Breakdown Voltage
BV
DSS
50
-
-
V
V
GS
=0V, I
D
=250
A
Static Drain to Source ON State Resistance
R
DS(on)
-
0.008
0.009
V
GS
=10V, I
D
=55A
Gate Threshold Voltage
V
GS(th)
2
-
4
V
I
DS
=250
A
Forward Transconductance
qfs
40
-
-
S
V
DS
=25V, Ids=55A
Zero Gate Voltage
Drain Current
I
DSS
-
-
-
-
25
250
A
A
V
DS
=50V, V
GS
=0V
V
DS
=44V, V
GS
=0V,
T
J
=150 C
Gate to Source Leakage Forward
I
GSS
-
-
100
nA
V
GS
=20V
Gate to Source Leakage Reverse
I
GSS
-
-
-100
nA
V
GS
=-20V
Input Capacitance
C
ISS
-
4200
-
pF
Output Capacitance
C
OSS
-
1400
-
pF
Reverse Transfer Capacitance
C
RSS
-
510
-
pF
V
GS
=0V
V
DS
=25V
COMPOSITE MODULE INCORPORATED
61 Union St Attleboro Massachusetts 02703
Phone: (508)226-6969
Fax: (508)226-0938
E-mail: sales@cmodules.com
Absolute Maximum Ratings
Drain to Source Voltage, V
DS
....................................................... 50V
Gate to Source Voltage, V
GS
......................................................... 20V
Continuous Drain Current, I
D
, 25C (Case) .................................... 55A
Pulsed Drain Current, I
DM
............................................................. 380A
Power Dissipation, P
D
, 25C (Case) .............................................. 200W
Operating Temperature Range, T
J
(Junction) ................................. -55C to +175C
Thermal Resistance Junction to Case, O
JC
..................................... 0.75C/W
Thermal Resistance Junction to Ambient, O
JA
................................ 62C/W
Storage Temperature Range, T
SIG
................................................... -55C to +175C
Lead Temperature, T
L
, (.0625 from case for 10S) ....................... 300C
ELECTRICAL SPECIFICATIONS:
(To 25C unless otherwise noted)
SOURCE-DRAIN DIODE CHARACTERISTICS
:
Continuous Source Current
I
S
-
-
55
A
Pulsed Source Current
I
SM
-
-
380
A
Diode Forward Voltage
V
SD
-
-
1.3
V
T
J
=25C, I
S
=55A, V
GS
=0V
CMI has made every effort to insure the accuracy of this specification. However, no responsibility is assumed for possible omissions and /or inaccuracies. CMI reserves the right to
make changes to this specification without further notice to improve reliability, function, or design. Changes and additions made after the publication of this data sheet will be reflected in
updated sheets. CMI does not assume any liability arising out of the application or use of circuit described herein; neither does it convey any license under its patent rights, nor the rights
of others.
2000 Composite Modules Incorporated
Rev 001
PDF 
ZIP