Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
FEATURES
30V ,7A , R
DS(ON)
=30m
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Drain Current-Continuous @T
J
=125 C
-Pulsed
I
D
2.0
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
62.5
/W
C
R
DS(ON)
=42m
@V
GS
=4.5V.
-20V , -4.3A , R
DS(ON)
=90m
@V
GS
=-4.5V.
R
DS(ON)
=120m
@V
GS
=-2.5V.
CEM11C2
a
a
a
a
b
30
7
30
2.3
-20
4.3
17
-4.3
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
SO-8
1
Jul. 2002
20
5-148
8
5
CEM11C2
N-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=
0V,I
D =
250
A
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30V, V
GS
=
0V
1
A
Gate-Body Leakage
I
GSS
V
GS
=
20V, V
DS
=
0V
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
=
V
GS
, I
D
=
250
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=
10V, I
D
=
7A
24
30
m
V
GS
=
4.5V, I
D
=
3.5A
32
42
m
On-State Drain Current
I
D(ON)
V
DS
=
5V, V
GS
=
10V
30
8
A
S
Forward Transconductance
FS
g
V
DS
=
15V, I
D
=
7A
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
804
P
F
328
P
F
P
F
79
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 25V,
I
D
= 1A,
V
GS
= 10V,
R
GEN
= 6
16
24
ns
ns
ns
ns
7
14
47
60
10
15
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 2A,
V
GS
=10V
20
24
nC
nC
nC
3
6
C
Fall Time
5-149
5
CEM11C2
P-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=
0V, I
D =
-250
A
-20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
-16V, V
GS
=
0V
-1
A
Gate-Body Leakage
I
GSS
V
GS
=
8
V, V
DS
=
0V
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
=
V
GS
, I
D
=
-250
A
-0.6
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=
-4.5V,I
D
=
-2.2A
50
90
m
V
GS
=
-2.5V,I
D
=
-1.8A
80
120
m
On-State Drain Current
I
D(ON)
V
DS
=
-5V, V
GS
=
-4.5V
-20
6
4
A
S
Forward Transconductance
FS
g
V
DS
=
-16V,I
D
=
-2.2A
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
1430
P
F
800
P
F
P
F
325
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= -2.2A,
V
GEN
= - 4.5V,
R
GEN
= 6
20
28
ns
ns
ns
ns
21
30
76
106
56
78
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-6V, I
D
= -2.2A,
V
GS
=-4.5V
19.4
25
nC
nC
nC
3
5
C
Fall Time
-1.5
5-150
5
CEM11C2
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 2A
N-Ch
0.76
1.1
-0.80
-1.0
V
GS
= 0V, Is =-1.8A P-Ch
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
a.Surface Mounted on FR4 Board, t 10sec.
N-Channel
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
C
,
Capacitance
(pF)
R
DS
(ON)
,
O
n-Resistance
(Ohms)
I
D
,
D
r
ain
Current
(A)
I
D
,
D
r
ain
Current
(A)
-55 C
25 C
30
24
18
12
6
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Tj=125 C
5-151
5
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,8,7,6,5V
V
GS
=4V
V
GS
=3V
Tj=125 C
25 C
-55 C
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
15
20
V
GS
=10V
0
5
10
15
20
25
30
Ciss
Coss
Crss
1800
1500
1200
900
600
300
0
CEM11C2
5
N-Channel
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
-Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
30.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=-250 A
12
9
6
3
15
0
0
5
10
15
20
V
DS
=15V
5-152
1.09
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250 A
5
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