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Электронный компонент: CBRHDSH1-40L

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MAXIMUM RATINGS: (TA=25C unless otherwise noted)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
DC Blocking Voltage
VR
40
V
RMS Reverse Voltage
VR(RMS)
28
V
Average Forward Current
IO
1.0
A
Peak Forward Surge Current
IFSM
20
A
Power Dissipation
PD
1.2
W
Operating Junction
Temperature Range
TJ
-50 to +125
C
Storage Temperature Range
Tstg
-50 to +150
C
Thermal Resistance
JA
85
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
IR
VR=40V
20
50
A
IR
VR=40V, TA=100C
5.0
20
mA
VF
IF=500mA
360
380
mV
VF
IF=1.0A
390
440
mV
CJ
VR=4.0V, f=1.0MHz
150
pF
CBRHDSH1-40L
HIGH DENSITY
1.0 AMP DUAL IN LINE
LOW VF
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE
Central
Semiconductor Corp.
TM
R1 (23-May 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CBRHDSH1-40L type is a full wave bridge
rectifier mounted in a durable epoxy surface
mount molded case, utilizing glass passivated
chips.
MARKING CODE: CSH1
Central
Semiconductor Corp.
TM
HD DIP CASE - MECHANICAL OUTLINE
CBRHDSH1-40L
HIGH DENSITY
1.0 AMP DUAL IN LINE
LOW VF
SCHOTTKY BRIDGE RECTIFIER
R1 (23-May 2006)
MARKING CODE: CSH1