MAXIMUM RATINGS: (TA=25C unless otherwise noted)
CBRHD
CBRHD
CBRHD
CBRHD
SYMBOL
-02
-04
-06
-10 *
UNITS
Peak Repetitive Reverse Voltage
VRRM
200
400
600
1000
V
DC Blocking Voltage
VR
200
400
600
1000
V
RMS Reverse Voltage
VR(RMS)
140
280
420
700
V
Average Forward Current (TA=40C)(1)
IO
0.5
A
Average Forward Current (TA=40C)(2)
IO
0.8
A
Peak Forward Surge Current
IFSM
30
A
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VF
IF=400mA
1.0
V
IR
VR=Rated VRRM
5.0
A
IR
VR=Rated VRRM, TA=125C
500
A
CJ
VR=4.0V, f=1.0MHz
20
pF
(1) Mounted on a Glass-Epoxy P.C.B.
(2) Mounted on a Ceramic P.C.B.
* Available on special order, please consult factory.
CBRHD SERIES
HIGH DENSITY
AMP DUAL IN LINE
BRIDGE RECTIFIER
HD DIP CASE
Central
Semiconductor Corp.
TM
R1 (26-September 2002)
FEATURES:
Truly efficient use of board space, requires only
42mm
2
of board space vs. 120mm
2
of board
space for industry standard 1.0 Amp surface
mount bridge rectifier.
50% higher density (amps/mm
2
) than the
industry standard 1.0 Amp surface mount
bridge rectifier.
Glass passivated chips for high reliability.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted
in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODES:
CBRHD-02: CBD2
CBRHD-04: CBD4
CBRHD-06: CBD6
CBRHD-10: CBD10
This series is UL listed, UL file number E130224
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