NE66719
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
DESCRIPTION
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. This device is ideal for oscillator or low noise
amplifier applications at 2 GHz and above.
PART NUMBER
NE66719
EIAJ
1
REGISTERED NUMBER
2SC55667
PACKAGE OUTLINE
19
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
100
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
100
h
FE
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
50
70
100
f
T
Gain Bandwidth at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
GHz
18
21
MAG
Maximum Available Power Gain
4
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
12.5
MSG
Maximum Stable Gain
5
at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
13.5
|S
21e
|
2
Insertion Power Gain at V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
dB
9.0
11.0
|S
21e
|
2
Insertion Power Gain at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
dB
9.5
11.5
NF
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz, Z
S
= Z
OPT
dB
1.1
1.5
IP
3
Third Order Intercept Point at V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
22
Cre
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
pF
0.24
0.30
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
DC
RF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG =
5. MSG =
S
21
S
12
S
21
S
12
(
K-
)
(K
2
-1)
California Eastern Laboratories
HIGH GAIN BANDWIDTH: f
T
= 21 GHz
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 19
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
U B
1.60.1
0.80.1
1.60.1
0.750.05
1.0
0.5
0.6
0 to 0.1
0.15
0.5
0.2
+0.1 -0
+0.1 -0.05
0.3
+0.1 -0
2
1
3
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
x 1.0 mm (t) glass epoxy substrate.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
15
V
CEO
Collector to Emitter Voltage
V
3.3
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
35
P
T
Total Power Dissipation
2
mW
115
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
NE66719
FREQ.
NF
MIN
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
TYPICAL NOISE PARAMETERS
(T
A
= 25C)
0.8
0.83
18.1
0.37
22.9
0.22
1.0
0.86
16.3
0.36
29.3
0.21
1.5
0.93
13.2
0.31
46.7
0.19
1.8
0.97
11.9
0.26
60.0
0.16
2.0
1.00
11.1
0.23
70.8
0.15
2.5
1.07
9.6
0.16
107.0
0.12
V
CE =
2
V
,
I
C =
5 mA
V
CE =
2
V
,
I
C =
3 mA
V
CE =
2
V
,
I
C =
7 mA
V
C =
2
V
,
I
C =
10 mA
V
C =
2
V
,
I
C =
20 mA
0.8
0.88
18.5
0.24
19.6
0.19
1.0
0.91
16.7
0.23
26.6
0.18
1.5
0.96
13.5
0.18
41.2
0.17
1.8
1.00
12.2
0.14
54.6
0.15
2.0
1.02
11.4
0.11
68.2
0.14
2.5
1.08
9.8
0.06
128.5
0.12
0.8
1.07
19.1
0.13
35.5
0.17
1.0
1.09
17.0
0.12
11.3
0.17
1.5
1.13
13.8
0.06
27.3
0.16
1.8
1.16
12.5
0.03
75.9
0.14
2.0
1.17
11.7
0.02
119.0
0.14
2.5
1.22
9.9
0.07
-115.5
0.14
0.8
1.25
19.1
0.04
-59.8
0.16
1.0
1.27
17.4
0.03
117.5
0.15
1.5
1.31
13.9
0.04
-75.8
0.16
1.8
1.34
12.5
0.07
-88.8
0.16
2.0
1.35
11.7
0.09
-112.4
0.15
2.5
1.40
10.1
0.16
-112.0
0.15
0.8
1.69
19.2
0.15
-146.7
0.16
1.0
1.70
17.3
0.18
-138.6
0.16
1.5
1.74
14.0
0.22
-126.0
0.18
1.8
1.77
12.6
0.24
-121.9
0.19
2.0
1.78
11.8
0.24
-119.9
0.20
2.5
1.83
10.2
0.27
-115.1
0.22
PART NUMBER
QUANTITY
PACKAGING
NE66719
Bulk
8 mm wide embossed taping
NE66719-T1
3k pcs/reel
Pin 3 (collector) faces
the perforation
ORDERING INFORMATION
NE66719
Ambient Temperature, T
A
(
C)
Collector to BaseVoltage V
CB
(V)
Reverse Transfer Capacitance C
re
Total Power Dissipation, P
tot
(mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Gain Bandwdth, f
T
(GHz)
DC Current Gain, hFE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
Base to Emitter Voltage, V
BE
(V)
Collector to Emitter Voltage, V
cE
(V)
Collector Current, l
C
(mA)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Mounted on Glass Epoxy Board
(1.08 cm
2
x 1.0 mm (t) )
200
200
115
100
50
0
25
50
75
100
125
150
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0
1
2
3
4
5
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
= 2 V
0
10
20
30
40
I
B
50
A step
1
2
3
4
5
450
A
250
A
I
B
= 50
A
V
CE
= 2 V
1000
100
0.001
0.01
0.1
1
10
100
10
25
20
15
10
5
0
1
10
100
f = 2 GHz
2 V
V
CE
= 1 V
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE66719
Input Power, P
in
(dBm)
Output Power, Pout (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Collector Current, I
C
(mA)
Frequency, f (GHz)
Frequency, f (GHz)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM
STABLE POWER GAIN vs. FREQUENCY
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM
STABLE POWER GAIN vs. FREQUENCY
Collector Current, I
C
(mA)
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Input Power, P
in
(dBm)
Output Power, Pout (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
MSG
MAG
V
CE
= 1 V
I
C
= 20 mA
S
21e
2
40
35
30
25
20
15
10
5
0
0.1
1
10
V
CE
= 2 V
I
C
= 20 mA
40
35
30
25
20
15
10
5
0
0.1
1
0
MSG
MAG
S
21e
2
MSG
MAG
V
CE
= 1 V
f = 2 GHz
S
21e
2
20
18
16
14
12
10
8
6
4
2
1
10
100
MSG
MAG
V
CE
= 2 V
f = 2 GHz
S
21e
2
20
18
16
14
12
10
8
6
4
2
0
1
10
100
100
80
60
40
20
0
20
30
10
0
-10
-20
V
CE
= 2 V, f = 1 GHz
I
cq
= 5 mA (RF OFF)
-30
-20
-10
0
10
20
I
C
P
out
0
V
CE
= 1 V, f = 2 GHz
I
cq
= 5 mA (RF OFF)
100
80
60
40
20
-30
-20
-10
0
10
20
I
C
P
out
20
30
10
0
-10
-20
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM STABLE
POWER GAIN vs. COLLECTOR CURRENT
Insertion Power Gain, |S
21e
|
2
(dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM STABLE
POWER GAIN vs. COLLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
NE66719
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Collector Current, I
C
(mA)
Noise Figure, NF (dB)
25
20
15
10
5
0
8
10
6
4
2
0
V
CE
= 2 V
f = 1 GHz
10
100
1
NF
G
a
25
20
15
10
5
0
8
10
6
4
2
0
V
CE
= 2 V
f = 1.5 GHz
10
100
1
NF
G
a
25
20
15
10
5
0
8
10
6
4
2
0
V
CE
= 2 V
f = 2 GHz
10
100
1
NF
G
a
25
20
15
10
5
0
8
10
6
4
2
0
V
CE
= 2 V
f = 2.5 GHz
10
100
1
NF
G
a
Associated Gain, G
a
(dB)
Associated Gain, G
a
(dB)
Associated Gain, G
a
(dB)
Associated Gain, G
a
(dB)
Remark The graphs indicate nominal characteristics.
NE66719
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
DS
= 1 V, I
C
= 5 mA, Z
O
= 50
0.1
0.822
-12.2
12.268
167.4
0.016
83.6
0.970
-8.8
0.2
0.793
-21.9
11.711
156.4
0.030
76.8
0.933
-17.5
0.3
0.738
-31.8
10.871
146.2
0.043
71.4
0.878
-25.2
0.4
0.678
-39.8
10.101
136.6
0.054
67.3
0.816
-32.0
0.5
0.614
-48.4
9.228
128.3
0.062
64.0
0.753
-37.6
0.6
0.553
-54.5
8.389
121.1
0.070
61.5
0.692
-42.4
0.7
0.501
-60.3
7.694
115.3
0.077
59.8
0.637
-46.3
0.8
0.449
-65.5
7.051
110.0
0.083
58.9
0.592
-49.7
0.9
0.409
-70.1
6.534
104.8
0.089
58.1
0.552
-52.7
1.0
0.369
-75.3
6.062
100.4
0.094
57.9
0.516
-55.3
1.1
0.340
-79.2
5.677
96.3
0.100
57.6
0.486
-57.8
1.2
0.312
-83.2
5.310
92.4
0.105
57.5
0.460
-60.0
1.3
0.285
-88.5
4.979
88.7
0.110
57.4
0.435
-62.1
1.4
0.261
-92.3
4.694
85.3
0.116
57.4
0.413
-64.5
1.5
0.241
-97.8
4.421
82.2
0.122
57.4
0.396
-66.6
1.6
0.223
-101.6
4.224
79.1
0.128
57.5
0.379
-68.8
1.7
0.210
-107.6
4.011
76.1
0.134
57.6
0.364
-70.9
1.8
0.187
-113.6
3.825
73.3
0.140
57.6
0.350
-73.1
1.9
0.180
-119.9
3.653
70.4
0.147
57.2
0.337
-75.5
2.0
0.170
-127.5
3.513
67.5
0.154
57.3
0.326
-78.1
2.1
0.167
-134.5
3.392
65.1
0.160
57.4
0.315
-80.6
2.2
0.162
-140.7
3.255
62.8
0.167
57.1
0.306
-83.5
2.3
0.160
-146.2
3.142
59.9
0.174
57.0
0.298
-86.4
2.4
0.163
-154.2
3.041
57.4
0.182
56.7
0.289
-89.7
2.5
0.165
-158.4
2.938
55.2
0.189
56.2
0.280
-93.3
2.6
0.167
-163.3
2.853
52.7
0.197
55.8
0.275
-97.1
2.7
0.174
-169.0
2.774
50.6
0.204
55.4
0.269
-101.3
2.8
0.175
-173.8
2.687
48.2
0.212
54.8
0.265
-105.0
2.9
0.178
-179.0
2.616
46.0
0.220
54.1
0.259
-108.6
3.0
0.182
173.3
2.548
43.9
0.229
53.6
0.253
-113.3
4.0
0.339
139.7
2.015
21.3
0.321
43.7
0.301
-166.8
5.0
0.530
117.8
1.546
-0.8
0.398
30.5
0.451
154.0
6.0
0.623
103.9
1.261
-14.3
0.443
17.7
0.585
130.4
7.0
0.713
90.6
0.996
-30.5
0.476
5.6
0.693
112.1
8.0
0.772
85.2
0.828
-33.0
0.495
-2.3
0.752
99.3
NE66719
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
DS
= 2 V, I
C
= 5 mA, Z
O
= 50
0.1
0.845
-9.9
11.956
168.4
0.014
86.8
0.978
-7.7
0.2
0.821
-19.3
11.451
158.1
0.027
79.0
0.947
-15.3
0.3
0.769
-27.8
10.734
148.4
0.039
73.5
0.901
-22.3
0.4
0.712
-35.8
10.039
139.3
0.049
69.2
0.846
-28.4
0.5
0.654
-43.2
9.282
131.4
0.057
66.3
0.789
-33.6
0.6
0.596
-48.8
8.499
124.2
0.065
63.6
0.734
-38.0
0.7
0.539
-53.8
7.844
118.2
0.071
62.1
0.682
-41.8
0.8
0.492
-58.6
7.217
113.2
0.077
60.9
0.637
-45.0
0.9
0.450
-62.4
6.715
107.9
0.083
60.4
0.600
-47.6
1.0
0.409
-66.4
6.309
103.5
0.088
59.9
0.564
-50.1
1.1
0.378
-70.4
5.886
99.4
0.093
59.7
0.533
-52.4
1.2
0.347
-73.8
5.532
95.4
0.098
59.5
0.507
-54.5
1.3
0.322
-77.2
5.212
91.8
0.103
59.5
0.484
-56.6
1.4
0.295
-80.9
4.914
88.4
0.109
59.5
0.461
-58.6
1.5
0.272
-84.3
4.645
85.0
0.114
59.6
0.443
-60.5
1.6
0.254
-87.4
4.437
81.8
0.120
59.7
0.426
-62.3
1.7
0.233
-91.3
4.220
79.0
0.126
59.9
0.411
-64.2
1.8
0.212
-96.3
4.028
76.0
0.131
60.0
0.397
-66.2
1.9
0.200
-100.3
3.851
73.2
0.138
59.9
0.384
-68.2
2.0
0.183
-106.4
3.710
70.5
0.145
60.0
0.373
-70.4
2.1
0.177
-113.6
3.579
67.9
0.151
60.2
0.361
-72.5
2.2
0.168
-118.9
3.441
65.6
0.158
60.1
0.352
-75.2
2.3
0.163
-121.6
3.319
62.9
0.165
59.9
0.344
-77.6
2.4
0.160
-130.8
3.222
60.4
0.172
59.7
0.335
-80.3
2.5
0.156
-137.4
3.120
58.1
0.179
59.4
0.324
-83.4
2.6
0.157
-140.2
3.031
55.8
0.187
59.2
0.319
-86.8
2.7
0.158
-146.1
2.945
53.5
0.194
58.7
0.312
-90.3
2.8
0.154
-153.9
2.861
51.3
0.202
58.3
0.306
-93.3
2.9
0.151
-158.8
2.781
49.1
0.210
57.6
0.299
-96.5
3.0
0.156
-167.1
2.705
46.8
0.219
57.1
0.290
-100.5
4.0
0.297
149.1
2.171
24.0
0.316
47.7
0.312
-152.1
5.0
0.504
123.2
1.700
1.0
0.401
34.0
0.448
163.8
6.0
0.605
107.5
1.371
-13.7
0.453
20.3
0.587
136.6
7.0
0.704
93.5
1.082
-30.8
0.488
7.3
0.701
116.1
8.0
0.767
87.3
0.877
-33.9
0.506
-1.2
0.760
102.0
NE66719
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
DS
= 2 V, I
C
= 20 mA, Z
O
= 50
0.1
0.660
-16.7
21.907
161.6
0.012
80.0
0.931
-11.7
0.2
0.585
-28.5
19.701
146.5
0.024
76.1
0.852
-22.2
0.3
0.505
-39.1
17.100
134.4
0.033
73.2
0.761
-30.0
0.4
0.444
-46.6
14.863
124.2
0.041
70.8
0.678
-35.3
0.5
0.381
-53.2
12.907
116.5
0.048
70.0
0.607
-38.9
0.6
0.328
-57.1
11.320
110.0
0.055
69.3
0.551
-41.6
0.7
0.287
-60.5
10.052
105.0
0.062
69.3
0.505
-43.4
0.8
0.255
-63.8
9.004
100.7
0.069
69.3
0.470
-44.9
0.9
0.228
-66.4
8.170
96.5
0.076
69.2
0.442
-46.2
1.0
0.202
-69.7
7.508
93.0
0.083
69.1
0.419
-47.4
1.1
0.181
-72.3
6.927
89.8
0.090
69.0
0.399
-48.7
1.2
0.161
-74.2
6.421
86.5
0.097
68.8
0.382
-50.0
1.3
0.148
-77.6
5.974
83.8
0.104
68.4
0.367
-51.3
1.4
0.135
-82.0
5.611
81.0
0.111
68.0
0.352
-52.8
1.5
0.117
-83.8
5.262
78.5
0.119
67.6
0.341
-54.4
1.6
0.106
-87.9
4.994
75.9
0.126
67.2
0.330
-55.9
1.7
0.098
-94.4
4.720
73.7
0.134
66.7
0.320
-57.4
1.8
0.085
-101.7
4.482
71.2
0.142
66.2
0.309
-59.2
1.9
0.074
-108.3
4.274
68.8
0.150
65.4
0.301
-61.2
2.0
0.070
-118.5
4.102
66.4
0.158
64.9
0.293
-63.4
2.1
0.071
-131.9
3.958
64.3
0.166
64.3
0.284
-65.5
2.2
0.066
-145.1
3.794
62.5
0.174
63.6
0.277
-68.1
2.3
0.071
-147.6
3.648
60.1
0.182
62.9
0.271
-70.7
2.4
0.079
-160.0
3.531
58.0
0.190
62.0
0.263
-73.6
2.5
0.079
-168.3
3.406
56.0
0.198
61.1
0.253
-76.9
2.6
0.087
-169.9
3.301
53.8
0.207
60.2
0.248
-80.5
2.7
0.094
-176.2
3.212
52.2
0.215
59.4
0.241
-84.3
2.8
0.098
176.4
3.110
50.1
0.223
58.4
0.235
-87.7
2.9
0.102
170.7
3.024
48.1
0.231
57.4
0.228
-91.3
3.0
0.111
161.5
2.945
46.0
0.240
56.5
0.219
-95.6
4.0
0.279
137.1
2.345
26.1
0.329
44.7
0.238
-155.9
5.0
0.484
117.4
1.854
5.5
0.402
31.3
0.375
159.4
6.0
0.577
104.4
1.555
-8.8
0.446
18.6
0.515
135.1
7.0
0.684
92.6
1.265
-26.0
0.480
6.6
0.641
116.5
8.0
0.757
86.6
1.058
-31.5
0.499
-1.5
0.709
103.3
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
10/23/02
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ZIP