Continental Device India Limited
Data Sheet
Page 1 of 3
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Designed for General purpose Medium Power Amplifier and Switching Circuits.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
2N6714
2N6714
2N6714
2N6714
2N6714
2N6715
2N6715
2N6715
2N6715
2N6715
2N6716
2N6716
2N6716
2N6716
2N6716
Units
Collector-Emitter Voltage
V
CEO
30
40
60
V
Collector-Base Voltage
V
CBO
40
50
60
V
Emitter-Base Voltage
V
EBO
-
5.0
-
V
Collector Current Continuous
I
C
-
1.5
-
A
Power Dissipation @ Ta=25C
P
D
-
850
-
mW
Operating And Storage Junction
T
j
,T
stg
-55 to +150
C
Temperature Range
2N6714
2N6715
2N6716
1 = EMITTER
2 = BASE
3 = COLLECTOR
1 2 3
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
E B
C
TO-237 Plastic Package
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
Continental Device India Limited
Data Sheet
Page 2 of 3
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta =25C unless otherwise specified)
Description
Description
Description
Description
Description
Symbol
Symbol
Symbol
Symbol
Symbol
Min.
Min.
Min.
Min.
Min.
Max.
Max.
Max.
Max.
Max.
Unit
Unit
Unit
Unit
Unit
Collector Cutoff Current
V
CB
=40V, I
E
=0
2N6714
2N6714
2N6714
2N6714
2N6714
I
CBO
-
100
nA
V
CB
=50V, I
E
=0
2N6715
2N6715
2N6715
2N6715
2N6715
-
100
nA
V
CB
=40V, I
E
=0
2N6716
2N6716
2N6716
2N6716
2N6716
-
100
nA
D.C. Current Gain
I
C
=10mA, V
CE
=1V
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
h
FE
55
-
I
C
=100mA, V
CE
=1V
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
60
-
I
C
=1A, V
CE
=1V
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
50
250
I
C
=50mA, V
CE
=1V
2N6716
2N6716
2N6716
2N6716
2N6716
80
-
I
C
=250mA, V
CE
=1V
2N6716
2N6716
2N6716
2N6716
2N6716
50
250
I
C
=500mA, V
CE
=1V
2N6716
2N6716
2N6716
2N6716
2N6716
20
-
Collector-Emitter Saturation Voltage
I
C
=1A, I
B
=100mA
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
V
CE(sat)
-
0.5
V
I
C
=250mA, I
B
=25mA 2N6716
2N6716
2N6716
2N6716
2N6716
-
0.35
V
Base Emitter on Voltage
I
C
=1A, V
CE
=1V
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
2N6714/6715
V
BE(on)
-
1.2
V
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Output Capacitance
V
CB
=10V, I
E
=0,
ALL
ALL
ALL
ALL
ALL
C
ob
-
20
pF
f=1MHz
Current-Gain-Bandwidth Product
I
C
=50mA, V
CE
=1V
2N6714/6716
2N6714/6716
2N6714/6716
2N6714/6716
2N6714/6716
f
T
50
500
MHz
2N6715
2N6715
2N6715
2N6715
2N6715
50
400
MHz
2N6714
2N6715
2N6716
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
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