Single
VCSEL chip
850nm
wavelength
range
Low threshold
current
Data rates
up to 12.5 Gbps
Common
cathode
configuration
(other
configurations
available upon
request)
F e a t u r e s
10 Gbps
Multi-Mode
VCSEL Chip
Ordering information
Part Number APA4901010000
March 2003
Preliminary Datasheet
N-contact
P-contact
Units in
m
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com
E l e c t r o - o p t i c a l c h a r a c t e r i s t i c s
Parameter*
Symbol Conditions
Ratings
Units
Min Typ Max
Threshold current
I
th
0.5
1
1.5
mA
Optical output power
P
out
I
op
= 8 mA
2.5
mW
Operating voltage
V
op
I
op
= 8 mA
1.9
V
Emission wavelength
I
op
= 8 mA
840
850
860
nm
Spectral bandwidth, RMS
I
op
= 8 mA
0.45
nm
Slope efficiency
I
op
= 8 mA
0.25 0.35
0.6
mW/mA
Beam divergence
Full width,
1
/e
2
,
28
32
I
op
= 8 mA
Diferential resistance
R
Diff
I
op
= 8 mA
50
70
Capacitance
C
0.6
0.9
pF
Bandwidth
f
3dB
I
op
= 8 mA
10
GHz
The above specifications are subject to change
without notice
Parameter
Symbol
Ratings
Units
Min
Typ
Max
Wavelength temperature variation
/
T
0.06
nm/K
Threshold current variation 0 70C
I
th
1
mA
T h e r m a l c h a r a c t e r i s t i c s
INVISIBLE LASER RADIATION
- AVOID DIRECT EXPOSURE
PEAK POWER : 3.5 mW
WAVELENGTH : 850 nm
CLASS IIIb LASER PRODUCT
*(T=25C unless otherwise noted)
10 Gbps
Multi-Mode
VCSEL Chip
Parameter*
Rating
Units
Optical output power
8
mW
Peak forward current
15
mA
Reverse voltage
5
V
Operating temperature
0 to +85
C
Storage temperature
-40 to +100
C
A b s o l u t e m a x i m u m r a t i n g s
PDF 
ZIP