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Электронный компонент: STN2222AS

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KST-2057-001
1
STN2222AS
NPN Silicon Transistor
Descriptions
General purpose application
Switching application
Features
Large collector current
Low collector saturation voltage
Complementary pair with STN2907AS
Ordering
Information
Type NO.
Marking
Package Code
STN2222AS
XA
SOT-23
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
2.4
0.1
1.30
0.1
0.45~0.60
0.
4 T
y
p
.
2.
9
0.
1
1.
1
2
M
a
x.
0.
3
8
0~
0.
1
0.
1
2
4
-0.
0
3
+0.
0
5
3
1
2
1.
9
0
T
y
p
.
0.2 Min.
KST-2057-001
2
STN2222AS
Absolute maximum ratings
(Ta=25



C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
60
V
Collector-Emitter voltage
V
CEO
40
V
Emitter-Base voltage
V
EBO
5
V
Collector current
I
C
600
mA
Collector dissipation
P
C
*
350
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
* : Package mounted on 99.5% Alumina 10
8
0.1
Electrical Characteristics
(Ta=25



C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10
A, I
E
=0
60
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=10mA, I
B
=0
40
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
A, I
C
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0
-
-
10
nA
DC current gain
h
FE
V
CE
=10V, I
C
=10mA
75
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=150mA, I
B
=15mA
-
0.4
V
Transition frequency
f
T
V
CE
=20V, I
C
=20mA
250
-
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
6.0
-
pF
KST-2057-001
3
STN2222AS
Electrical Characteristic Curves
Fig. 4 V
CE(SAT)
- I
C
Fig. 3 I
C
- V
CE
Fig. 2 I
C
- V
BE
Fig. 5 h
FE
- I
C
Fig. 1 Pc - Ta