KST-9078-003
1
STK7000
N-Channel Enhancement-Mode MOSFET
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
Description
High speed switching application.
Features
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch
High saturation current capability.
Ordering
Information
Type NO.
Marking
Package Code
STK7000
STK7000
TO-92
Outline Dimensions unit :
mm
4.5
0.1
4.5
0.1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.20
0.1
0.38
PIN Connections
1. Source
2. Gate
3. Drain
KST-9078-003
2
STK7000
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Drain-Source voltage
V
DSS
60
V
Gate-Source voltage
V
GS
20
V
Maximum Drain current
I
D
200
mA
Pulsed Drain Current
I
DM
500
mA
Power dissipation
P
D
400
mW
Maximum Junction-to-Ambient
R
thJA
312.5
C/W
Operating Junction and
Storage temperature range
T
J
, T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Drian-Source breakdown voltage
BV
DSS
I
D
=10
A, V
GS
=0
60
-
-
V
Gate-Threshold voltage
V
GS(t h)
I
D
=1mA, V
DS
=V
GS
0.8
2.1
3.0
V
Zero Gate voltage drain current
I
DSS
V
DS
=48V, V
GS
=0
-
-
1
A
Gate-body leakage
I
GSS
V
DS
=0V, V
GS
=
15V
-
-
100
nA
On-state drain current *
I
D(on)
V
DS
=10V, V
GS
=4.5V
75
350
-
mA
Drain-Source on-resistance *
R
DS(ON)
V
GS
=4.5V, I
D
=0.075A
-
4.5
5.3
V
GS
=10V, I
D
=0.5A
-
2.4
5.0
Drain-Source on-resistance *
R
DS(ON)
T
J
=125
-
4.4
9.0
Forward transconductance *
g
fs
V
DS
=10V, I
D
=0.2A
100
-
-
mS
Input capacitance
C
iss
V
DS
=25V, V
GS
=0, f=1MHz
-
22
60
pF
Output capacitance
C
oss
V
DS
=25V, V
GS
=0, f=1MHz
-
11
25
pF
Reverse Transfer capacitance
C
rss
V
DS
=25V, V
GS
=0, f=1MHz
-
2
5
pF
Turn-on time
t
ON
V
DD
=15V, I
D
=0.5A
V
GEN
=10V, R
G
=25
-
-
10
ns
Turn-off time
t
OFF
V
DD
=15V, I
D
=0.5A
V
GEN
=10V, R
G
=25
-
-
10
ns
*. Pulse test : Pulse width300us, Duty cycle2.0%
PDF 
ZIP
