KST-3059-000
1
STJ828UF
P-Channel Enhancement-Mode MOSFET
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S
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e
m
m
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c
c
o
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n
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Description
High speed switching application.
Analog switch application.
Features
-2.5V Gate drive.
Low threshold voltage : Vth = -0.5~ -1.5V.
High speed.
Ordering
Information
Type NO.
Marking
Package Code
STJ828UF
J28 SOT-323F
Outline Dimensions unit :
mm
PIN Connections
1. Gate
2. Source
3. Drain
2.10.1
1.300.1
1
0.
30~0.
40
1.
30 BSC
2
2.
0
0.
1
0.
11
0.
05
0.
70-
0.
15
3
0~0.
1
+0.
1
KST-3059-000
2
STJ828UF
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Drain-Source voltage
V
DS
-20 V
Gate-Source voltage
V
GSS
7
V
DC Drain current
I
D
-50
mA
Drain Power dissipation
P
D
150
mW
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Drian-Source breakdown voltage
BV
DSS
I
D
=-100A, V
GS
=0
-20 V
Gate-Threshold voltage
V
th
I
D
=-0.1mA, V
DS
=-3V -0.5
-1.5
V
Drain cut-off current
I
DSS
V
DS
=-20V, V
GS
=0
-1
A
Gate leakage current
I
GSS
V
GS
=7V, V
DS
=0
1
A
Drain-Source on-resistance
R
DS(ON)
V
GS
=-2.5V, I
D
=-10mA
40
Forward transfer admittance
Y
fs
V
DS
=-3V, I
D
=-10mA 15
mS
Input capacitance
C
iss
V
DS
=-3V, V
GS
=0, f=1MHz
10.4
pF
Output capacitance
C
oss
V
DS
=-3V, V
GS
=0, f=1MHz
8.4
pF
Reverse Transfer capacitance
C
rss
V
DS
=-3V, V
GS
=0, f=1MHz
2.8
pF
Turn-on time
t
ON
V
DD
=-3V, I
D
=-10mA
V
GEN
=0~-2.5V
0.15
Turn-off time
t
OFF
V
DD
=-3V, I
D
=-10mA
V
GEN
=0~-2.5V
0.13
*. Switching Time Test Circuit
=
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