KST-8004-001
1
STD1664
NPN Silicon Transistor
Description
Medium power amplifier application
Features
P
C
(Collector dissipation)=2W(Ceramic substate of 40
40
0.8mm used)
Low collector saturation voltage : V
CE(sat)
=0.15V(Typ.)
Complementary pair with STB1132
Ordering
Information
Type NO.
Marking
Package Code
STD1664
A2
SOT-89
: h
FE
rank, monthly code
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
4.0
0.50
0.1
1.
8
2
0.
05
0~
0.
1
1.
5
-0.
1
+0.
2
3
1
2
4.
5
-0.3
+0.5
2.5
-0.3
+0.2
1.00
0.3
-0.
1
+0.
2
0.
5
2
0.
05
0.
4
2
0.
05
0.
4
2
-0.
0
2
+0.
0
4
0.
1
5
T
y
p
.
KST-8004-001
2
STD1664
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
40
V
Collector-Emitter voltage
V
CEO
32
V
Emitter-Base voltage
V
EBO
5
V
Collector current
I
C
1
A
P
C
0.5
Collector dissipation
P
C
*
2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
* : When mounted on 40
40
0.8mm ceramic substate
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50
A, I
E
=0
40
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
32
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50
A, I
C
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.5
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.5
A
DC current gain
h
FE
*
V
CE
=3V, I
C
=0.1A
100
-
320
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
0.15
0.4
V
Transition frequency
f
T
V
CE
=5V, I
C
=50mA
-
150
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
15
-
pF
* : h
FE
rank / O : 100 ~ 200, Y : 160 ~ 320
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