KST-H018-000
1
STD13005
NPN Silicon Power Transistor
Features
High speed switching
V
CEO(sus)
=400V
Suitable for Switching Regulator and Motor Control
Ordering
Information
Type NO. Marking Package Code
STD13005 STD13005 TO-220AB
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
KST-H018-000
2
STD13005
Absolute maximum ratings
(Tc=25)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
700 V
Collector-Emitter voltage
V
CEO
400 V
Emitter-base voltage
V
EBO
9 V
Collector current (DC)
I
C
4 A
Collector current (Pulse)
I
CM
8 A
Base current (DC)
I
B
2 A
Base current (Pulse)
I
BM
4 A
Total Power dissipation (Tc=25)
P
D
75 W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Tc=25)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Emitter sustaining voltage
V
CE(sus)
I
C
=10mA, I
B
=0 400
-
-
V
Collector cut-off current
I
CEV
V
CEV
=Rated Value
V
BE(off)
=1.5V
- - 1 mA
Emitter cut-off current
I
EBO
V
EB
=9V, I
C
=0 -
-
1
mA
I
C
=1A, V
CE
=5V 10
-
60
DC Current gain
h
FE
*
I
C
=2A, V
CE
=5V 8
-
40
I
C
=1A, I
B
=0.2A -
-
0.5
I
C
=2A, I
B
=0.5A -
-
0.6
Collector-Emitter saturation voltage
V
CE(sat)
*
I
C
=4A, I
B
=1A -
-
1
V
I
C
=1A, I
B
=0.2A -
-
1.2
Base-Emitter saturation voltage
V
BE(sat)
*
I
C
=2A, I
B
=0.5A -
-
1.6
V
Transition frequency
f
T
V
CB
=10V, I
C
=0.5A, f=1MHz
4
-
-
MHz
Output capacitance
C
ob
V
CB
=10V, I
E
=0, f=0.1MHz
-
65
-
pF
Turn on Time
t
ON
-
-
0.8
Storage Time
t
STG
-
-
4
Fall Time
t
F
V
CC
=125V,I
C
=2A, R
L
=62.5
I
B1
=-I
B2
=0.4A
- - 0.9
* Pulse test: PW300 , Duty cycle2% Pulse
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