KSR-2039-000
1
SRA2212S
PNP Silicon Transistor
Descriptions
Switching application
Interface circuit and driver circuit application
Features
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
High packing density
Ordering
Information
Type NO.
Marking
Package Code
SRA2212S
RAB
SOT-23
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
Equivalent Circuit
R
1
B(IN)
E(COMMON)
C(OUT)
R
1
= 100K
2.4
0.1
1.30
0.1
0.45~0.60
0.
4 T
y
p
.
2.
9
0.
1
1.
12 M
a
x.
0.
38
0~0.
1
0.
124
-0.
03
+0.
0
5
3
1
2
1.
90 T
y
p
.
0.2 Min.
PIN Connections
1. Base
2. Emitter
3. Collector
KSR-2039-000
2
SRA2212S
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100
mA
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
C
Storage Temperature
T
STG
-55 ~ 150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0 -
-
-500
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0 -
-
-500
nA
DC Current Gain
h
FE
V
CE
=-5V, I
C
=-1mA 120
-
-
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-10mA, I
B
=-0.5mA -
-0.1
-0.3
V
Transition Frequency
f
T
*
V
CE
=-10V, I
C
=-5mA -
250
-
MHz
Input Resistance
R
1
-
-
100
-
K
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 2 V
CE(SAT)
- I
C
Fig. 1 h
FE
- I
C
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