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Электронный компонент: SI5314-H(B)

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KLI-8005-002
1
SI5314-H / SI5314-H(B)
IRED
Features
Colorless transparency lens type
5mm
(T-1
3/4
)
all plastic mold type
Low power consumption
High radiant intensity
Applications
Infrared remote control and free air transmission systems with low forward voltage and
comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
STRAIGHT TYPE STOPPER TYPE
2.9
0.2
8.7
0.2
23.0 MIN
5.8
0.2
23.0 MIN
5.8
0.2
1
2
2.54 NOM
1.0 MIN
1
2
2.54 NOM
5.0
0.2
8.7
0.2
0.5
0.8
0.2
0.5
5.0
0.2
1.0 MIN
0.8
0.2
PIN Connections
1.Anode
2.Cathode
KLI-8005-002
2
SI5314-H / SI5314-H(B)


Absolute maximum ratings
Characteristic Symbol
Ratings
Unit
Power Dissipation
P
D
150
mW
Forward Current
I
F
100
mA
*
1
Peak Forward Current
I
FP
1
A
Reverse Voltage
V
R
4
V
Operating Temperature
T
opr
-2585
Storage Temperature
T
stg
-30100
*
2
Soldering Temperature
T
sol
260 for 5 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Forward Voltage
V
F
I
F
= 50mA
-
1.3
1.7
V
Radiant Intensity
I
E
I
F
= 50mA
15
35
-
mW/Sr
Peak Wavelength
P
I
F
= 50mA
-
950
-
nm
Spectrum Bandwidth
I
F
= 50mA
-
50
-
nm
Reverse Current
I
R
V
R
=4V -
-
10
uA
*
3
Half angle
1
/
2
I
F
= 50mA
-
25
- deg
*3.
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity
KLI-8005-002
3
SI5314-H / SI5314-H(B)

Characteristic Diagrams
Fig.4 Spectrum Distribution
Fig. 3 I
F
Ta
Fig. 2 I
E
- I
F
Fig. 1 I
F
- V
F
F
o
rw
ard Cu
rren
t

I
F
[mA]
Ambient Temperature Ta [
]
R
e
la
tiv
e
I
n
ten
s
ity

[
%
]
Wavelength
[nm]
Forward Voltage V
F
[V]
F
o
rw
ard Cu
rren
t

I
F
[mA]
Forward Current I
F
[mA]
Fig. 5 Radiation Diagram
R
a
dia
n
t I
n
ten
s
ity
I
E
[mW/Sr]
Relative Radiant Intensity I
E
[%]