KST-2041-002
1
SBT92
PNP Silicon Transistor
Descriptions
High voltage application
Telephone application
Features
Collector-Emitter voltage :
V
CEO
=SBT92 : -300V
Complementary pair with SBT42
Ordering
Information
Type NO.
Marking
Package Code
SBT92
M2A
SOT-23
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
2.4
0.1
1.30
0.1
0.45~0.60
0.
4 T
y
p
.
2.
9
0.
1
1.
1
2
M
a
x.
0.
3
8
0~
0.
1
0.
1
2
4
-0.
0
3
+0.
0
5
3
1
2
1.
9
0
T
y
p
.
0.2 Min.
KST-2041-002
2
SBT92
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-300
V
Collector-Emitter voltage
V
CEO
-300
V
Emitter-Base voltage
V
EBO
-6
V
Collector current
I
C
-500
mA
Emitter current
I
E
500
mA
Collector dissipation
P
C
*
350
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
* : Package mounted on 99.5% alumina 10
8
0.6mm
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-100
A, I
E
=0
-300
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0
-300
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-100
A, I
C
=0
-6
-
-
V
Collector cut-off current
I
CBO
V
CB
=-200V, I
E
=0
-
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-3V, I
C
=0
-
-
-0.1
A
DC current gain
h
FE
*
V
CE
=-10V, I
C
=-30mA
40
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
*
I
C
=-20mA, I
B
=-2mA
-
-
-0.5
V
Base-Emitter saturation voltage
V
BE(sat)
*
I
C
=-20mA, I
B
=-2mA
-
-
-0.9
V
Transition frequency
f
T
V
CE
=-20V, I
C
=-10mA
50
-
-
MHz
Collector output capacitance
C
ob
V
CB
=-20V, I
E
=0, f=1MHz
-
-
6
pF
* : Pulse Tester : Pulse Width300 , Duty Cycle2.0%
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