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Электронный компонент: SA1316

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KLA-9001-001
1
SA1316
Chip LED Lamp
Features
1.6mm(L)0.8mm small size surface mount type
Thin package of 0.55mm(H) thickness
Transparent clear lens optic
Low power consumption type chip LED

Applications
LCD backlighting
Keypad backlighting
Symbol backlighting
Front panel indicator lamp

Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
KLA-9001-001
2
SA1316


Absolute maximum ratings
Characteristic Symbol
Ratings
Unit
Power Dissipation
P
D
70
mW
Forward Current
I
F
25
mA
*
1
Peak Forward Current
I
FP
50
mA
Reverse Voltage
V
R
4
V
Operating Temperature
T
opr
-2580
C
Storage Temperature
T
stg
-30100
C
*
2
Soldering Temperature
T
sol
240C for 5 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2. Recommended soldering Temperature Profile
2-1) Preheating 100C to 150C within 2 minutes Soldering 240C within 5 seconds
Gradual cooling (Avoid quenching)

Electrical Characteristics
Characteristic Symbol
Test
Condition
Min
Typ
Max Unit
Forward Voltage
V
F
I
F
= 20mA
-
2.0
2.8
V
Luminous Intensity
I
V
I
F
= 20mA
-
6
-
mcd
Peak Wavelength
P
I
F
= 20mA
-
630
-
nm
Spectrum Bandwidth
I
F
= 20mA
-
35
-
nm
Reverse Current
I
R
V
R
=4V -
-
10
uA
X
-
65
-
Half Angle
1/2
Y
I
F
= 20mA
-
70
-
deg


KLA-9001-001
3
SA1316

Characteristic Diagrams
Fig.4 Spectrum Distribution
Fig. 3 I
F
Ta
Fig. 2 I
V
- I
F
Fig. 1 I
F
- V
F
F
o
rward Current
I
F
[mA]
Ambient Temperature Ta []
R
e
lative Intensit
y
[%]
Wavelength [nm]
Forward Voltage V
F
[V]
F
o
rward Current
I
F
[mA]
Forward Current I
F
[mA]
Luminous Intensit
y I
v
[mcd]
Fig. 5-1 Radiation Diagram(X)
Relative Luminous Intensity Iv [%]
Fig. 5-2 Radiation Diagram(Y)
Relative Luminous Intensity Iv [%]