KST-2025-000
1
BC808
PNP Silicon Transistor
Descriptions
High current application
Switching application
Features
Suitable for AF-Driver stage and low power output stages
Complementary pair with BC818
Ordering
Information
Type NO.
Marking
Package Code
BC808
MA
SOT-23
: h
FE
rank
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
2.4
0.1
1.30
0.1
0.45~0.60
0.
4 T
y
p
.
2.
9
0.
1
1.
1
2
M
a
x.
0.
3
8
0~
0.
1
0.
1
2
4
-0.
0
3
+0.
0
5
3
1
2
1.
9
0
T
y
p
.
0.2 Min.
KST-2025-000
2
BC808
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-30
V
Collector-Emitter voltage
V
CEO
-25
V
Emitter-base voltage
V
EBO
-5
V
Collector current
I
C
-800
mA
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0
-25
-
-
V
Base-Emitter Turn On voltage
V
BE(ON)
V
CE
=-1V, I
C
=-300mA
-
-
-1.2
V
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-700
mV
Collector cut-off current
I
CBO
V
CB
=-25V, I
E
=0
-
-
-100
nA
DC current gain
h
FE
*
V
CE
=-1V, I
C
=-100mA
100
-
630
-
Transition frequency
f
T
V
CB
=-5V, I
E
=10mA,
f=100MHz
-
100
-
MHz
Collector output capacitance
Cob
V
CB
=-10V, I
E
=0, f=1MHz
-
16
-
pF
* : h
FE
rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
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