1
0360IEPROM4/03
Features
Fast Read Access Time 90 ns
Low Power CMOS Operation
100 A Max Standby
40 mA Max Active at 5 MHz
JEDEC Standard Packages
32-lead PLCC
32-lead 600-mil PDIP
32-lead TSOP
5V
10% Supply
High-Reliability CMOS Technology
2,000V ESD Protection
200 mA Latchup Immunity
Rapid
TM
Programming Algorithm 50 s/Byte (Typical)
CMOS and TTL Compatible Inputs and Outputs
Integrated Product Identification Code
Industrial and Commercial Temperature Ranges
Description
The AT27C080 chip is a low-power, high-performance 8,388,608-bit one-time pro-
grammable read only memory (OTP EPROM) organized as 1M by 8 bits. The
AT27C080 requires only one 5V power supply in normal read mode operation. Any
byte can be accessed in less than 90 ns, eliminating the need for speed reducing
WAIT states on high-performance microprocessor systems.
8-Megabit
(1M x 8) OTP
EPROM
AT27C080
TSOP Top View
Type 1
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
O0 - O7
Outputs
CE
Chip Enable
OE/VPP
Output Enable/
Program Supply
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
A18
VCC
A19
A16
A15
A12
A7
A6
A5
OE/VPP
A10
CE
O7
O6
O5
O4
O3
GND
O2
O1
O0
A0
A1
A2
A3
A4
PDIP Top View
PLCC Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A19
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
VCC
A18
A17
A14
A13
A8
A9
A11
OE/VPP
A10
CE
O7
O6
O5
O4
O3
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
O0
A14
A13
A8
A9
A11
OE/VPP
A10
CE
O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
O1
O2
GND
O3
O4
O5
O6
A12
A15
A16
A19
VCC
A18
A17
2
AT27C080
0360IEPROM4/03
Atmel's scaled CMOS technology provides low active power consumption and fast program-
ming. Power consumption is typically 10 mA in active mode and less than 10 A in standby
mode.
The AT27C080 is available in a choice of packages, including; one-time programmable (OTP)
plastic PLCC, PDIP and TSOP. All devices feature two-line control (CE, OE) to give designers
the flexibility to prevent bus contention.
With high density 1M byte storage capability, the AT27C080 allows firmware to be stored reli-
ably and to be accessed by the system without the delays of mass storage media.
Atmel's AT27C080 has additional features to ensure high quality and efficient production use.
The Rapid
Programming Algorithm reduces the time required to program the part and guaran-
tees reliable programming. Programming time is typically only 50
s/byte. The Integrated
Product Identification Code electronically identifies the device and manufacturer. This feature
is used by industry standard programming equipment to select the proper programming algo-
rithms and voltages.
System
Considerations
Switching between active and standby conditions via the Chip Enable pin may produce tran-
sient voltage excursions. Unless accommodated by the system design, these transients may
exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1
F high
frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This
capacitor should be connected between the V
CC
and Ground terminals of the device, as close
to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit
boards with large EPROM arrays, a 4.7
F bulk electrolytic capacitor should be utilized, again
connected between the V
CC
and Ground terminals. This capacitor should be positioned as
close as possible to the point where the power supply is connected to the array.
Block Diagram
3
AT27C080
0360IEPROM4/03
Note:
1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is
V
CC
+ 0.75V DC which may overshoot to +7.0V for pulses of less than 20 ns.
Notes:
1. X can be V
IL
or V
IH.
2. Refer to Programming Characteristics.
3. V
H
= 12.0 0.5V.
4. Two identifier bytes may be selected. All Ai inputs are held low (V
IL
), except A9 which is set to V
H
and A0 which is toggled
low (V
IL
) to select the Manufacturer's Identification byte and high (V
IH
) to select the Device Code byte.
Absolute Maximum Ratings*
Temperature Under Bias................................ -55C to +125C
*NOTICE:
Stresses beyond those listed under "Absolute
Maximum Ratings" may cause permanent
damage to the device. This is a stress rating
only and functional operation of the device at
these or any other conditions beyond those
indicated in the operational sections of this
specification is not implied. Exposure to abso-
lute maximum rating conditions for extended
periods may affect device reliability.
Storage Temperature ..................................... -65C to +150C
Voltage on Any Pin with
Respect to Ground .........................................-2.0V to +7.0V
(1)
Voltage on A9 with
Respect to Ground ......................................-2.0V to +14.0V
(1)
V
PP
Supply Voltage with
Respect to Ground .......................................-2.0V to +14.0V
(1)
Integrated UV Erase Dose............................. 7258 Wsec/cm
2
Operating Modes
Mode/Pin
CE
OE/V
PP
Ai
Outputs
Read
V
IL
V
IL
Ai
D
OUT
Output Disable
X
V
IH
X
(1)
High Z
Standby
V
IH
X
X
High Z
Rapid Program
(2)
V
IL
V
PP
Ai
D
IN
PGM Verify
V
IL
V
IL
Ai
D
OUT
PGM Inhibit
V
IH
V
PP
X
High Z
Product Identification
(4)
V
IL
V
IL
A9 = V
H
(3)
A0 = V
IH
or V
IL
A1 - A19 = V
IL
Identification
Code
4
AT27C080
0360IEPROM4/03
Notes:
1. V
CC
must be applied simultaneously or before OE/ V
PP
, and removed simultaneously or after OE/V
PP
.
Notes:
1. 2, 3, 4, 5. See AC Waveforms for Read Operation.
DC and AC Operating Conditions for Read Operation
AT27C080-90
AT27C080-10
AT27C080-12
AT27C080-15
Operating
Temperature (Case)
Com.
0C - 70C
0C - 70C
0C - 70C
0C - 70C
Ind.
-40
C - 85
C
-40
C - 85
C
-40
C - 85
C
-40
C - 85
C
V
CC
Power Supply
5V
10%
5V
10%
5V
10%
5V
10%
DC and Operating Characteristics for Read Operation
Symbol
Parameter
Condition
Min
Max
Units
I
LI
Input Load Current
V
IN
= 0V to V
CC
(Com., Ind.)
1.0
A
I
LO
Output Leakage Current
V
OUT
= 0V to V
CC
(Com., Ind.)
5.0
A
I
SB
V
CC
(1)
Standby Current
I
SB1
(CMOS), CE = V
CC
0.3V
100
A
I
SB2
(TTL), CE = 2.0 to V
CC
+ 0.5V
1.0
mA
I
CC
V
CC
Active Current
f = 5 MHz, I
OUT
= 0 mA, CE = V
IL
40
mA
V
IL
Input Low Voltage
-0.6
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= -400 A
2.4
V
AC Characteristics for Read Operation
Symbol
Parameter
Condition
AT27C080
Units
-90
-10
-12
-15
Min
Max
Min
Max
Min
Max
Min
Max
t
ACC
(4)
Address to Output Delay
CE = OE/V
PP
= V
IL
90
100
120
150
ns
t
CE
(3)
CE to Output Delay
OE = V
IL
90
100
120
150
ns
t
OE
(3)(4)
OE to Output Delay
CE = V
IL
20
20
30
35
ns
t
DF
(2)(5)
OE or CE High to Output Float, whichever
occurred first
30
30
35
40
ns
t
OH
Output Hold from Address, CE
or OE/V
PP
,whichever occurred first
0
0
0
0
ns
5
AT27C080
0360IEPROM4/03
AC Waveforms for Read Operation
(1)
Notes:
1. Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified.
2. t
DF
is specified form OE/VPP or CE, whichever occurs first. Output float is defined as the point when data is no longer driven.
3. OE/V
PP
may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE.
4. OE/V
PP
may be delayed up to t
ACC
- t
OE
after the address is valid without impact on t
ACC
.
5. This parameter is only sampled and is not 100% tested.
Input Test Waveform and Measurement Levels
t
R
, t
F
< 20 ns (10% to 90%)
Output Test Load
Note:
1. CL = 100 pF including jig capacitance.
Note:
1. Typical values for nominal supply voltage. This parameter is only sampled and is not 100% tested.
OUTPUT
PIN
1.3V
(1N914)
3.3K
CL
Pin Capacitance
f = 1 MHz, T = 25
C
(1)
Symbol
Typ
Max
Units Conditions
C
IN
4
8
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
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