A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 20 mA
60
V
BV
CES
I
C
= 25 mA
R
BE
= 10
60
V
BV
EBO
I
E
= 20 mA
4.0
V
I
CBO
V
CB
= 50 V
12
mA
h
FE
V
CE
= 5 V
I
C
= 1.0 A
20
120
---
P
OUT
P
G
C
V
CC
= 50 V P
IN
= 13 W f = 960 to 1215 MHz
Pulse Width = 20
S Duty Cycle = 5 %
250
6.0
7.0
40
W
dB
%
PACKAGE STYLE
RF POWER TRANSISTOR
TAN250A
DESCRIPTION:
The
ASI TAN250A
is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
Gold Metallization
Hermetic Package
Input/Output Matching
MAXIMUM RATINGS
I
C
30 A
V
CB
60 V
P
DISS
575 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
JC
0.30
O
C/W
PDF 
ZIP