A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 0.1 mA
20 V
BV
CEO
I
C
= 1.0 mA
10
V
BV
EBO
I
E
= 500 A
2.5
V
I
CBO
V
CB
= 8.0 V
10
A
h
FE
V
CE
= 5.0 V I
C
= 30 mA
50
300
---
C
cb
V
CB
= 6.0 V
f = 1.0 MHz
0.7
1.0
pF
G
NF
V
CE
= 6.0 V
I
C
= 10 mA f = 0.5 GHz
f = 1.0 GHz
10
16.5
12
dB
NF
V
CE
= 6.0 V I
C
= 10 mA f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
1.0
1.5
2.8
2.0
dB
NPN SILICON RF TRANSISTOR
MRF571
DESCRIPTION:
The ASI
MRF571
is Designed for low-
noise, wide dynamic range front end
amplifiers.
Applications up to 2.0 GHz.
FEATURES:
Low Noise Figure
High Gain
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
70 mA
V
CBO
20 V
V
CEO
10 V
V
EBO
3.0 V
P
DISS
1.0 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +150 C
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
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