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Электронный компонент: ASIMRF460

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 100 mA
40
V
BV
CEO
I
C
= 100 mA
20
V
BV
EBO
I
E
= 5.0 mA
4.0
V
I
CES
V
CE
= 12.5 V
10
mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
20
---
C
OB
V
CB
= 12.5 V f = 1.0 MHz
300
350
pF
G
PE
IMD



C
V
CC
= 12.5 V I
C
= 4.7 A P
OUT
= 40 W
(
PEP
)
f = 30 MHz
12
40
15
-35
45
-30
dB
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF460
DESCRIPTION:
The
ASI MRF460
is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
FEATURES INCLUDE:
OmnigoldTM Metalization System
P
G
= 12 dB Min. @ 30 MHz & 40 W
Efficiency 40%
MAXIMUM RATINGS
I
C
215 A
V
CBO
40 V
V
CEO
20 V
V
EBO
4.0 V
P
DISS
175 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +150 C



JC
1.0 C/W
PACKAGE STYLE .500" 4L FLANGE
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER