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Электронный компонент: ASIBFW13

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
I
GS
V
GS
= 10 V
T
C
= 150
O
C
100
100
pA
nA
I
DSS
V
DS
= 15 V V
GS
= 0 V
0.2
1.5
mA
V
GS
V
DS
= 15 V
I
D
= 50
A
0.1
1.0
V
V
(P)GS
V
DS
= 15 V I
D
= 500 pA
1.2
V
Iy
fs
I
Iy
os
I
V
DS
= 15 V V
GS
= 0 V
1500
10



S
Iy
fs
I
Iy
os
I
V
DS
= 15 V I
D
= 200
A f = 1.0 MHz
500
5.0



S
C
iss
C
rs
V
DS
= 15 V f = 1.0 MHz
5.0
0.8
pF
V
n
V
DS
= 15 V I
D
= 200
A BW = 0.6 to 100 Hz
500
nV
N-CHANNEL SILICON FET
DEPLETION MODE
BFW13
DESCRIPTION:
The
ASI BFW13
is Designed for Low
Noise Video Amplifier Applications
.
MAXIMUM RATINGS
I
D
10 mA
I
G
5.0 mA
V
DS
30 V
V
DG
30 V
V
GS
30 V
P
tot
150 mW @ T
A
= 110
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C



JA
590
O
C/W
PACKAGE STYLE TO- 72
Order code: ASI10832
1 = SOURCE 2 = DRAIN
3 = GATE 4 = SHIELD