A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 40 mA
25
28
V
BV
CER
I
C
= 20 mA
R
BE
= 51
40
V
BV
CBO
I
C
= 20 mA
45
V
I
CBO
V
CB
= 20 V
5.0
mA
BV
EBO
I
E
= 5 mA
3.0
V
h
FE
V
CE
= 20 V I
C
= 500 mA
10
--
C
OB
V
CB
= 25 V
20
pF
P
G
IMD
3
V
CE
= 25 V
I
C
= 2 x 900 mA
P
REF
= 14 W
F = 860 MHz
Vision = -8 dB Sound = -7 dB SB = -16 dB
8.5
9.5
-47
dB
dB
NPN SILICON RF POWER TRANSISTOR
TPV595A
DESCRIPTION:
The
TPV595A
is Designed for Class
AB Push Pull, Common Emitter from
470 to 860 MHz Applications.
FEATURES:
Gold Metalization
Emitter Ballast Resistors
Internal Input Matching
MAXIMUM RATINGS
I
C
2 x 2.6 A
V
CB
45 V
P
DISS
65 W @ T
C
= 25
O
C
T
J
-50
O
C to +200
O
C
T
STG
-50
O
C to +200
O
C
JC
2.5
O
C/W
PACKAGE STYLE .250 BAL FLG
Order Code:
ASI10835
M I N I M U M
inches / mm
.055 / 1.40
.243 / 6.17
.630 / 16.00
B
C
D
E
F
G
A
M A X I M U M
.670 / 17.01
.255 / 6.48
inches / mm
.125 / 3.18
H
DIM
K
L
I
J
.315 / 8.00
.002 / 0.05
.075 1.91
.327 / 8.31
.006 / 0.15
.095 / 2.41
N
M
.245 / 6.22
.257 / 6.53
.060 / 1.52
.092 / 2.34
.055 / 1.40
.065 / 1.65
.190 / 4.83
K
.020 x 45
J
F
E
D
C
H
I
G
L
M
.050 x 45
N
B
A
. 1 3 0 N O M .
.065 / 1.65
.555 / 14.10
.739 / 18.77
.565 / 14.35
.750 / 19.05
Collector - 2 places
Emitter connected to flange
Base - 2 places
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