A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CBO
I
C
= 1.0 mA
40
V
BV
CEO
I
C
= 1.0 mA
28
V
BV
EBO
I
E
= 1.0 mA
3.5
V
I
CBO
V
CB
= 24 V
0.5
mA
h
FE
V
CE
= 5.0 V I
C
= 100 mA
20
120
---
C
OB
V
CB
= 24 V
f = 1.0 MHz
5.0
pF
P
G
V
CC
= 24 V
I
CQ
= 125 mA f = 960 MHz
P
OUT
= 1.0 W
10
dB
NPN SILICON RF POWER TRANSISTOR
CBSL1SL
DESCRIPTION:
The
ASI CBSL1SL
is Designed for
Class A, Cellular Base Staion
Applications up to 960 MHz.
FEATURES:
Class A Operation
P
G
= 10 dB at 1.0 W/960 MHz
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
0.250 A
V
CBO
40 V
V
CEO
28 V
V
EBO
3.5 V
P
DISS
7.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
25
O
C/W
PACKAGE STYLE .280 4L PILL
ORDER CODE: ASI10578
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
C
B
E
E
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