A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
BR
I
R
= 10
A
60
V
C
J
V
R
= 10 V
f = 2 - 18 GHz
0.025
0.035
pF
R
S
I
F
= 10 mA
f = 1.0 GHz
2.5
3.0
I
F
= 10 mA
I
R
= 6.0 mA
40
nS
t
rr
I
F
= 10 mA
I
R
= 6.0 mA
2.4
nS
Lead Pull
5
gm
SILICON BEAM LEAD PIN DIODE
ASB8000
PACKAGE STYLE BL1
DESCRIPTION:
The
ASB8000
is a Silicon Beam Lead
PIN Diode Designed for High Speed
Switching Applications Up to 18 GHz.
FEATURES INCLUDE:
Low Capacitance - 0.025 pF Typical
Low Series Resistance - 2.5
Typical
High Beam Pulls - 5 Grams Minimum
MAXIMUM RATINGS
I
F
100 mA
V
R
60 V
P
DISS
250 mW @ T
A
= 25
O
C
T
J
-65
O
C to +175
O
C
T
STG
-65
O
C to +200
O
C
JA
600
O
C/W
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