A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
BR
I
R
= 10
A
300
V
C
J
V
R
= 50 V f = 1.0 MHz
V
R
= 40 V
0.2
pF
R
S
I
F
= 50 mA f = 100 MHz
0.6
Ohms
T
L
I
F
=10 mA I
R
= 6.0 mA
1000
nS
T
rr
I
F
=20 mA I
R
= 100 mA
100
nS
SILICON PIN DIODE CHIP
AP3000A-00
DESCRIPTION:
The
AP3000C-11
is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Package.
This Device is Designed to Cover a
Wide Range of Control Applications
Such as RF Switching,Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
MAXIMUM RATINGS
I
F
100 mA
V
R
300 V
P
DISS
250 mW @ T
A
= 25
O
C
JC
20
O
C/W
PACKAGE STYLE 01
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