A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL TEST
CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CEO
I
C
= 5.0 mA
25
V
BV
CBO
I
C
= 100
A
45 V
I
CBO
V
CE
= 30 V
100
nA
I
EBO
V
EB
= 2.0 V
500
nA
h
FE
V
CE
= 10 V I
C
= 50 mA
20
200
---
f
t
V
CE
= 15 V I
C
= 15 mA f = 200 MHz
V
CE
= 15 V I
C
= 70 mA
1200
1400
MHz
C
OB
V
CB
= 15 V f = 1.0 MHz
3.0
pF
G
PE
V
CE
= 15 V I
C
= 50 mA f = 200 MHz
15
17
dB
NF
V
CE
= 15 V I
C
= 30 mA f = 200 MHz
3.0
4.0
dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
2SC1252
DESCRIPTION:
The
2SC1252
is a High Frequency
Transistor, Designed for Wide Band
Amplifier Applications up to 500 MHz.
FEATURES INCLUDE:
High Gain -17 dB Typ. @ 200 MHz
Low NF - 3.0 dB Typ. @ 200 MHz
Hermetic TO-39 Package
MAXIMUM RATINGS
I
C
400 mA
V
CB
45 V
V
CE
25 V
P
DISS
5 W @ T
C
= 25 C
T
J
-65 to +200 C
T
STG
-65 to +200 C
JC
35 C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 & 4 = Collector (Case)
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